Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ju‑Won Shin"'
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz:
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Autor:
Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2988-2993
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5fbf60a499b5e14c02c350cf6d8d8d
https://doi.org/10.1109/ted.2023.3268626
https://doi.org/10.1109/ted.2023.3268626
Publikováno v:
Materials Science Forum. 1074:125-131
This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c575dfe785174b9782cd6c27b0dfa182
https://doi.org/10.4028/p-ajv0ev
https://doi.org/10.4028/p-ajv0ev
Publikováno v:
Journal of special education : theory and practice. 23:103-127
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6a1c87deccbbfe9deacbde303cc5c9a
https://doi.org/10.19049/jsped.2022.23.3.05
https://doi.org/10.19049/jsped.2022.23.3.05
Publikováno v:
Journal of special education : theory and practice. 22:43-67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71698fb2bb0d97ddbed335607d561c5
https://doi.org/10.19049/jsped.2021.22.4.03
https://doi.org/10.19049/jsped.2021.22.4.03
Autor:
Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
Scientific Reports
The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60362455c4bce92f49e1b352eac53f6c
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Autor:
Walid Amir, Ju-Won Shin, Surajit Chakraborty, Ki-Yong Shin, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hyuk-Min Kwon, Tae-Woo Kim
Publikováno v:
2022 Asia-Pacific Microwave Conference (APMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a890d96a827802c1677416792ab2edb8
https://doi.org/10.23919/apmc55665.2022.10000060
https://doi.org/10.23919/apmc55665.2022.10000060
Autor:
Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
Materials; Volume 15; Issue 23; Pages: 8415
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38377ed4ae7029cb139af821eed46a86
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d25a8c2778acc7b8b9cefc6e9d58a2e2
https://doi.org/10.1109/essderc55479.2022.9947118
https://doi.org/10.1109/essderc55479.2022.9947118