Zobrazeno 1 - 10
of 185
pro vyhledávání: '"Jürgen Furthmüller"'
Autor:
Giancarlo Cappellini, Andrea Bosin, Giovanni Serra, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti
Publikováno v:
ACS Omega, Vol 5, Iss 22, Pp 13268-13277 (2020)
Externí odkaz:
https://doaj.org/article/917d2de2eb114986a47b9f16ce426d75
Publikováno v:
Symmetry, Vol 15, Iss 2, p 539 (2023)
We conducted a systematic investigation using state-of-the-art techniques on the electronic and optical properties of two crystals of alkaline earth metal fluorides, namely rutile MgF2 and cubic SrF2. For these two crystals of different symmetry, we
Externí odkaz:
https://doaj.org/article/f96928dbc8aa485fa14c1e6cd2540d84
Autor:
Silvana Botti, Friedhelm Bechstedt, Pedro Borlido, Claudia Rödl, Jens Renè Suckert, Jürgen Furthmüller
Publikováno v:
Physical Review Materials. 5
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-funct
Autor:
D. Busse, Alain Dijkstra, Jens Renè Suckert, Claudia Rödl, M. A. J. V. Tilburg, V. T. V. Lange, Jos E. M. Haverkort, Marcel A. Verheijen, Jürgen Furthmüller, Silvana Botti, Erik P. A. M. Bakkers, Elham M. T. Fadaly, Friedhelm Bechstedt, Jonathan J. Finley
Publikováno v:
2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings
Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca14ddf3f9482d4a76c85e2cebd4b332
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
Autor:
Leanne A. H. Jones, Oliver Bierwagen, Markus R. Wagner, Jürgen Furthmüller, Claudia Draxl, Joel B. Varley, Paul R. Chalker, Tien-Lin Lee, Patrick Vogt, Alexander Karg, Jack E. N. Swallow, Tim D. Veal, Zachary W. Lebens-Higgins, Anna Regoutz, Jörg Schörmann, Matthew J. Smiles, Pardeep K. Thakur, Christian Vorwerk, J.W. Roberts, Sara Abdel Razek, Piero Mazzolini, Philip A. E. Murgatroyd, Louis F. J. Piper, Martin Eickhoff
Publikováno v:
CHEMISTRY OF MATERIALS
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03e96558aa28418ac464bc4e5389967e
http://arxiv.org/abs/2005.13395
http://arxiv.org/abs/2005.13395
Autor:
Silvana Botti, Giovanni Serra, Friedhelm Bechstedt, Jürgen Furthmüller, Andrea Bosin, Giancarlo Cappellini
Publikováno v:
ACS Omega
ACS Omega, Vol 5, Iss 22, Pp 13268-13277 (2020)
ACS Omega, Vol 5, Iss 22, Pp 13268-13277 (2020)
We report a systematic investigation on the electronic and optical properties of the smallest stable clusters of alkaline-earth metal fluorides, namely, MgF2, CaF2, SrF2, and BaF2. For these clusters, we perform density functional theory (DFT) and ti
Autor:
Heinz Schmid, Jürgen Furthmüller, Marcel A. Verheijen, Sebastian Kölling, Alain Dijkstra, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jens Renè Suckert, Elham M. T. Fadaly, Jos E. M. Haverkort, M. A. J. V. Tilburg, Jonathan J. Finley, Dorian Ziss, V. T. V. Lange, Julian Stangl, Silvana Botti, Philipp Staudinger, D. Busse, Claudia Rödl
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are
Autor:
V. T. V. Lange, Claudia Rödl, Erik P. A. M. Bakkers, Alain Dijkstra, D. Busse, Elham M. T. Fadaly, Marcel A. Verheijen, Friedhelm Bechstedt, Jos E. M. Haverkort, Jens Renè Suckert, Jürgen Furthmüller, Jonathan J. Finley, Silvana Botti, M. A. J. V. Tilburg
Publikováno v:
Conference on Lasers and Electro-Optics.
Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 pm.
Autor:
Lars Matthes, Filipe Matusalem, Friedhelm Bechstedt, Marcelo Marques, Jürgen Furthmüller, Lara K. Teles
Publikováno v:
Physical Review B. 100
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. For highly symmetric hexagonal systems its numerical values are close to the conductance
Publikováno v:
Physical Review B. 97
Complex ordered phases involving spin and charge degrees of freedom in condensed matter, such as layered cuprates and nickelates, are exciting but not well understood solid-state phenomena. The rich underlying physics of the overdoped high-temperatur