Plasma doping implant depth profile calculation based on ion energy distribution measurements

Autor: Gilles Cartry, Timothy J. Miller, Ludovic Godet, Damien Lenoble, Steven R. Walther, Z. Fang, Christophe Cardinaud, Svetlana Radovanov, Jt Scheuer, F. Lallement, E.A. Arevalo

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2391. ⟨10.1116/1.2353841⟩

International audience; In traditional beamline implantation, the incident ion mass and energy are well known parameters and simulation programs are available to predict the implant profiles. In plasma based ion implantation, all ionized species pres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bbf09c50a0b990f4a8150233c2fcc1b
https://hal.archives-ouvertes.fr/hal-00379624/document