Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jr. John K. Moriarty"'
Publikováno v:
2009 IEEE International Conference on IC Design and Technology.
A 30 volt, fully oxide isolated, complementary silicon bipolar technology with pnp cutoff frequencies greater than 3.5 GHz is presented in this paper. The process, developed within a fabless semiconductor company, provides high voltage, high speed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbd1abc4543741f91534e1c2274ffd0
https://doi.org/10.1109/icicdt.2009.5166261
https://doi.org/10.1109/icicdt.2009.5166261
Autor:
Jr. John K. Moriarty, T.E. Truax
Publikováno v:
IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.
The ATT2161/AT2162 integrated electronic ballast chip set includes control circuitry and integral high-voltage power FETs to operate fluorescent lamps. Programmable, dual-level current limit provides for filament preheating and overcurrent protection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a58ba13d0004051159f21aa176c5a085
https://doi.org/10.1109/ias.1995.530569
https://doi.org/10.1109/ias.1995.530569
Publikováno v:
IEEE Journal of Solid-State Circuits. 23:450-456
A custom monolithic integrated circuit used as a direct interface between a single-wire data link and microcomputer assemblies in the harsh automotive environment is described. Unusual circuitry allows operation from a single 5-V supply with a ground
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5144af017dd5f7dd50367171590104
https://doi.org/10.1109/4.1006
https://doi.org/10.1109/4.1006