Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jozefien Goossens"'
Autor:
Mansour Kouyaté, Xiaodong Xu, Maju Kuriakose Malayil, Preethy Chirukandath Menon, Nicolaas B. Roozen, Jozefien Goossens, Loic Martinez, Ravindran Nair Rajesh, Pascal Griesmar, Robbe Salenbien, Christ Glorieux, Jose Jesus Agustin Flores Cuautle, Stéphane Serfaty
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (8), ⟨10.1088/0022-3727/49/8/085502⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (8), ⟨10.1088/0022-3727/49/8/085502⟩
The evolution of the elastic and thermal properties of a tetramethylorthosilicate (TMOS)-based gel that exhibits an extraordinary ringing effect when enclosed in a bottle is investigated during the sol–gel transition. The results demonstrate the fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8cfb88cf8c82dae7d1a58e70ed2d5e
https://hal.archives-ouvertes.fr/hal-01672112
https://hal.archives-ouvertes.fr/hal-01672112
Autor:
Wilfried Vandervorst, Andriy Hikavyy, Matthieu Gilbert, Jozefien Goossens, Sebastian Koelling, Olivier Richard
Publikováno v:
Surface and Interface Analysis. 43:163-166
The laser-assisted Atom Probe has been proposed as a metrology tool for semiconductor technology to meet the requirements accompanying the analysis of the ever smaller and more complex structures targeted for fabrication. In order to support its rout
Autor:
Hugo Bender, Olivier Richard, Trudo Clarysse, Jean-Luc Everaert, Akira Sakai, Matty Caymax, Ngoc Duy Nguyen, Lijun Yang, Wilfried Vandervorst, Jozefien Goossens, Roger Loo, Shotaro Takeuchi, Jing-Cheng Lin, Alain Moussa, Erik Rosseel, Shigeaki Zaima
Publikováno v:
Thin Solid Films. 518:S48-S52
We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications
Autor:
G. Merklin, Janusz Bogdanowicz, Erik Rosseel, Nick E. B. Cowern, Nick Bennett, Rong Lin, Dirch Hjorth Petersen, Peter Folmer Nielsen, Jozefien Goossens, Trudo Clarysse, Ole Hansen, Alain Moussa, Wilfried Vandervorst
Publikováno v:
Materials Science and Engineering: B. :24-30
In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outper
Autor:
Wilfried Vandervorst, Francesca Clemente, Rudolf Srnanek, Guy Brammertz, Damian Radziewicz, B. Sciana, R. Kinder, Marc Meuris, Jozefien Goossens, Zhiqiang Li, Pierre Eyben, Trudo Clarysse, D. Vanhaeren
Publikováno v:
Materials Science in Semiconductor Processing. 11:259-266
As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as Ge and GaAs is rapidly increasing. For the timely development of these new technologies accurate dopant and carrier-profiling solutions for source-drain extensio
Autor:
Jozefien Goossens, Gijs Brouwers, Marie-Laure David, Alessandra Satta, Frédéric Pailloux, Marc Meuris, Eddy Simoen, Trudo Clarysse, Brigitte Parmentier, Wilfried Vandervorst
Publikováno v:
Materials Science in Semiconductor Processing. 11:368-371
The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 °C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy
Autor:
Shotaro Takeuchi, Alain Moussa, Roger Loo, Wilfried Vandervorst, Ngoc Duy Nguyen, Trudo Clarysse, Jozefien Goossens, Matty Caymax, Erik Rosseel, Jean-Luc Everaert
Publikováno v:
2009 International Semiconductor Device Research Symposium.
Advances in CMOS technology require the reduction of the physical dimensions of devices as described by the International Technology Roadmap for Semiconductors. In this down-scaling process, the limits of manufacturability are being extended in order
Autor:
A. De Keersgieter, Erik Rosseel, Wilfried Vandervorst, K. De Meyer, Malgorzata Jurczak, R. Schreutelkamp, Susan Felch, C. Ortolland, Jozefien Goossens, Philippe Absil, Serge Biesemans, Pierre Eyben, Christa Vrancken, Taiji Noda, T. Y. Hoffmann, Trudo Clarysse
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number.
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 55(3)
Three experimental laser ultrasonic configurations--line excitation with scanning detection, grating excitation with single point detection, and grating excitation with scanning probe beam--are shown to consistently reveal the modified propagation pr
Autor:
Erik Rosseel, Wilfried Vandervorst, Rong Lin, Peter Folmer Nielsen, Dirch Hjorth Petersen, Jozefien Goossens, Trudo Clarysse, K Churton
Publikováno v:
MRS Proceedings. 1070
Maintaining or improving device performance while scaling semiconductor devices, necessitates the development of extremely shallow (< 20 nm) source/drain extensions with a very high dopant concentration and electrical activation level. Whereas soluti