Zobrazeno 1 - 10
of 599
pro vyhledávání: '"Joynt R"'
Autor:
Yuan, Mingyun, Joynt, R., Yang, Zhen, Tang, Chunyang, Savage, D. E., Lagally, M. G., Eriksson, M. A., Rimberg, A. J.
Publikováno v:
Phys. Rev. B 90, 035302, (2014)
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic fie
Externí odkaz:
http://arxiv.org/abs/1212.0918
Autor:
Simmons, C. B., Prance, J. R., Van Bael, B. J., Koh, Teck Seng, Shi, Zhan, Savage, D. E., Lagally, M. G., Joynt, R., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 106, 156804 (2011)
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quant
Externí odkaz:
http://arxiv.org/abs/1010.5828
Publikováno v:
Applied Physics Letters 98, 073108 (2011)
Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such a
Externí odkaz:
http://arxiv.org/abs/1003.0494
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spi
Externí odkaz:
http://arxiv.org/abs/0911.2452
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rash
Externí odkaz:
http://arxiv.org/abs/0908.2417
Autor:
Simmons, C. B., Thalakulam, Madhu, Rosemeyer, B. M., Van Bael, B. J., Sackmann, E. K., Savage, D. E., Lagally, M. G., Joynt, R., Friesen, M., Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nano Lett., 2009, 9 (9), pp 3234-3238
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling,
Externí odkaz:
http://arxiv.org/abs/0905.1647
We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that t
Externí odkaz:
http://arxiv.org/abs/0904.2592
Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $\tau_{s}$ has been measured by
Externí odkaz:
http://arxiv.org/abs/0808.2913
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this r
Externí odkaz:
http://arxiv.org/abs/0801.4898
Autor:
Shaji, Nakul, Simmons, C. B., Thalakulam, Madhu, Klein, Levente J., Qin, Hua, Luo, H., Savage, D. E., Lagally, M. G., Rimberg, A. J., Joynt, R., Friesen, M., Blick, R. H., Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nature Physics v4, pp540-544 (2008)
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advance
Externí odkaz:
http://arxiv.org/abs/0708.0794