Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Joyce Ann T. De Guzman"'
Autor:
Joyce Ann T. De Guzman, Vladimir P. Markevich, Jack Mullins, Nicholas Grant, John D. Murphy, Daniel Hiller, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
De Guzman, J A T, Markevich, V P, Mullins, J, Grant, N, Murphy, J D, Hiller, D, Halsall, M P & Peaker, A R 2022, Formation and Elimination of Electrically Active Thermally-Induced Defects in Float-Zone-Grown Silicon Crystals . in R Brendel, C Ballif, S Dubois, S Glunz, G Hahn, J Poortmans, P Verlinden & A Weeber (eds), SiliconPV 2021-11th International Conference on Crystalline Silicon Photovoltaics ., 130003, AIP Conference Proceedings, vol. 2487, American Institute of Physics, 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021, Hamelin, Virtual, Germany, 19/04/21 . https://doi.org/10.1063/5.0089287
Understanding the origins of the phenomena that limit the minority carrier lifetime in float-zone-grown silicon (FZ-Si) is an important area in photovoltaics research. Although FZ silicon has been applauded for its stability, purity, and high minorit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af468bc77b45dcd9a86f6e66ce93853
http://wrap.warwick.ac.uk/158723/1/WRAP-formation-elimination-electrically-active-thermally-induced-defects-float-zone-grown-silicon-crystals-Murphy-2022.pdf
http://wrap.warwick.ac.uk/158723/1/WRAP-formation-elimination-electrically-active-thermally-induced-defects-float-zone-grown-silicon-crystals-Murphy-2022.pdf
Autor:
Anthony R. Peaker, Hussein M. Ayedh, Robert J. Falster, Jeff Binns, Matthew P. Halsall, Vladimir P. Markevich, Nikolay V. Abrosimov, Iain F. Crowe, José Coutinho, I. D. Hawkins, Joyce Ann T. De Guzman
Publikováno v:
De Guzman, J A T, Markevich, V P, Hawkins, I D, Ayedh, H M, Coutinho, J, Binns, J, Falster, R, Abrosimov, N V, Crowe, I F, Halsall, M P & Peaker, A R 2021, ' Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps ', Physica Status Solidi (A) Applications and Materials Science . https://doi.org/10.1002/pssa.202100108
Funding Information: The authors would like to thank EPSRC (UK) for funding this work via grant EP/TO25131/1. J.A.T.D.G. would like to thank the Government of the Philippines through the Department of Science and Technology (DOST) for her Ph.D. fundi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::223b4624d5d9e43f5a2be07efde147c4
https://aaltodoc.aalto.fi/handle/123456789/109032
https://aaltodoc.aalto.fi/handle/123456789/109032
Autor:
Tarek O. Abdul Fattah, Vladimir P. Markevich, Joyce Ann T. De Guzman, José Coutinho, Stanislau B. Lastovskii, Ian D. Hawkins, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
physica status solidi (a). 219:2200176
Autor:
Fiacre Rougieux, Joyce Ann T. De Guzman, Ziv Hameiri, Vladimir P. Markevich, Yan Zhu, Saman Jafari, Anthony R. Peaker
Publikováno v:
Jafari, S, Zhu, Y, Rougieux, F, De Guzman, J A T, Markevich, V P, Peaker, A R & Hameiri, Z 2021, ' On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon ', ACS Applied Materials and Interfaces, vol. 13, no. 5, pp. 6140–6146 . https://doi.org/10.1021/acsami.0c17549
Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d5419f059bf44fe1a7924dd1cb4eb83
https://www.research.manchester.ac.uk/portal/en/publications/on-the-correlation-between-lightinduced-degradation-and-minority-carrier-traps-in-borondoped-czochralski-silicon(867df400-44c2-4a47-bb78-f5d1dbcbdb81).html
https://www.research.manchester.ac.uk/portal/en/publications/on-the-correlation-between-lightinduced-degradation-and-minority-carrier-traps-in-borondoped-czochralski-silicon(867df400-44c2-4a47-bb78-f5d1dbcbdb81).html
Autor:
Joyce Ann T. De Guzman, José Coutinho, Vladimir P. Markevich, Anthony R. Peaker, Nikolay V. Abrosimov, Matthew P. Halsall
Publikováno v:
De Guzman, J A T, Markevich, V P, Coutinho, J, Abrosimov, N V, Halsall, M P & Peaker, A R 2021, ' Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon ', Solar RRL . https://doi.org/10.1002/solr.202100459
The subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature-induced degradation (LeTID) in boron-doped solar silicon. Ab initio modeling of structure, binding energy, and electroni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::541d7ac9729d3663c4ba335761eff75c
Autor:
Vladimir P. Markevich, John D. Murphy, Yan Zhu, Nicholas E. Grant, Anthony R. Peaker, Gianluca Coletti, Ziv Hameiri, Joyce Ann T. De Guzman, Fiacre Rougieux
Publikováno v:
Zhu, Y, Rougieux, F, Grant, N E, De Guzman, J A T, Murphy, J D, Markevich, V P, Coletti, G, Peaker, A R & Hameiri, Z 2021, ' Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon ', IEEE Journal of Photovoltaics, vol. 11, no. 1, 9244147, pp. 26-35 . https://doi.org/10.1109/JPHOTOV.2020.3031382
Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14128ef18164575a9571eb05df057a9e
https://doi.org/10.1109/JPHOTOV.2020.3031382
https://doi.org/10.1109/JPHOTOV.2020.3031382
Autor:
Joyce Ann T. De Guzman, Saman Jafari, Yan Zhu, Vladimir P. Markevich, Ziv Hameiri, Fiacre Rougieux, Anthony R. Peaker
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Light-induced degradation (LID) has a considerable impact on solar cells made from boron-doped Czochralski (Cz) grown silicon wafers. Thus, a great effort has been made to investigate this type of degradation. Recently, it has been suggested that min
Autor:
Joyce Ann T. De Guzman, Pietro P. Altermatt, Jeff Binns, Iain F. Crowe, Vladimir P. Markevich, Robert J. Falster, Simon Hammersley, Nikolay V. Abrosimov, I. D. Hawkins, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Minority carrier traps in Czochralski-grown (Cz) silicon crystals doped with either boron, aluminum, gallium, or indium impurity atoms have been investigated by means of deep-level transient spectroscopy and other junction-related techniques. The exp
Autor:
Daniel Hiller, Joyce Ann T. De Guzman, Jaakko Julin, Dirk König, Vladimir P. Markevich, John D. Murphy, Anthony R. Peaker, Daniel Macdonald, Wolfgang Bock, Slawomir Prucnal, Nicholas E. Grant
Publikováno v:
Hiller, D, Markevich, V P, de Guzman, J A T, König, D, Prucnal, S, Julin, J, Peaker, A R, Macdonald, D, Grant, N E & Murphy, J D 2020, ' Kinetics of Bulk Lifetime Degradation in Float-Zone Silicon : Fast Activation and Annihilation of Grown-In Defects and the Role of Hydrogen versus Light ', Physica Status Solidi (A) Applications and Materials Science, vol. 217, no. 17, 2000436 . https://doi.org/10.1002/pssa.202000436
Float-zone (FZ) silicon often has grown-in defects that are thermally activated in a broad temperature window (≈300–800 °C). These defects cause efficient electron-hole pair recombination, which deteriorates the bulk minority carrier lifetime an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7adfa2ad11cfa9d0da8f7b42479fd7b4
http://urn.fi/URN:NBN:fi:jyu-202007305423
http://urn.fi/URN:NBN:fi:jyu-202007305423
Autor:
Joyce Ann T. de Guzman, Vladimir P. Markevich, Ian D. Hawkins, José Coutinho, Hussein M. Ayedh, Jeff Binns, Nikolay V. Abrosimov, Stanislau B. Lastovskii, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
Publikováno v:
De Guzman, J A T, Markevich, V P, Hawkins, I D, Coutinho, J, Ayedh, H M, Binns, J, Abrosimov, N V, Lastovskii, S B, Crowe, I F, Halsall, M P & Peaker, A R 2021, ' Acceptor-oxygen defects in silicon : The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer ', Journal of Applied Physics, vol. 130, no. 24, 245703 . https://doi.org/10.1063/5.0076980
It is well established that boron reacts with two oxygen atoms in Czochralski-grown silicon (Cz-Si) to form a defect, which is responsible for the dominant light-induced degradation (LID) in solar cells made from Cz-Si:B material. The detrimental eff