Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Joybelle Lopez"'
Autor:
Armando Somintac, Jessica Afalla, Arnel Salvador, Vladimir Sarmiento, Elmer Estacio, Victor Dc Andres Vistro, Maria Angela Faustino, Clairecynth Yu, Valynn Katrine Mag-usara, Neil Irvin Cabello, Joybelle Lopez, Hannah Bardolaza, Miezel Talara, Alexander De Los Reyes, John Paul Ferrolino, Masahiko Tani, John Daniel Vasquez, Masaki Shiihara
Publikováno v:
14th Pacific Rim Conference on Lasers and Electro-Optics (CLEO PR 2020).
We present threefold enhancement of terahertz emission from silicon nanowire (SiNW)-coated gallium-arsenide photoconductive antenna over its uncoated counterpart. The enhancement is attributed to the increased photoabsorption, and possibly additional
Autor:
Lorenzo Lopez, Armando Somintac, Thanh Binh Nguyen, Philippe Martin Tingzon, Joselito Muldera, Arnel Salvador, Joybelle Lopez, Xuan Tu Nguyen, Elmer Estacio, Arvin I. Mabilangan, Kerr Cervantes, Hong Minh Pham, Dinh Cong Nguyen, Neil Irvin Cabello, Alexander De Los Reyes, Arven Cafe
Publikováno v:
Journal of Luminescence. 186:312-317
We report increased radiation in the visible and terahertz (THz) regimes in silicon(Si)-based nanostructures. The nanostructures, Si nanowires (SiNWs) and porous Si (PSi), were synthesized via electroless and electrochemical surface modification, res
Publikováno v:
Materials Science Forum. 890:89-92
High aspect ratio silver nanowires (Ag NWs) were successfully synthesized by CuCl2-mediated synthesis. Scanning electron microscopy (SEM) and X-Ray diffraction were employed to investigate the morphology and structure of the Ag products, respectively
Autor:
Arnel Salvador, Gerald Angelo Catindig, Elmer Estacio, John Daniel Vasquez, Karl Cedric Gonzales, Ameera Jose, Miguel Bacaoco, Arven Cafe, Armando Somintac, Anthony Montecillo, Alexander De Los Rcyes, Joybelle Lopez, Maria Angela Faustino
Publikováno v:
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
A semiconductor terahertz (THz) emitter based on an active i-/n-GaAs layer integrated on a porous silicon (PSi) distributed Bragg reflector (PSi-DBR) is presented. It is specifically designed for the use of a very thin GaAs film of thickness less tha
Autor:
Arnel Salvador, Maria Angela Faustino, Armando Somintac, Lorenzo Lopez, Arven Cafe, Arvin I. Mabilangan, Joybelle Lopez
Publikováno v:
AIP Conference Proceedings.
Porous silicon was fabricated through electrochemical etching and is used as an optical template for liquid sensing application. Using reflectance spectroscopy, change in optical properties such as refractive index and reflectivity upon liquid introd