Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jowei Dun"'
Publikováno v:
Thin Solid Films. 332:397-403
In the Damascene process, the need for separating plug and interconnect process steps is completely eliminated. This patterning scheme offers tremendous advantages, it will begin to emerge in the deep sub-micron generation and utilizes Al CMP as a cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7010759ed043c143f37deff211372fb9
https://doi.org/10.1016/s0040-6090(98)01200-0
https://doi.org/10.1016/s0040-6090(98)01200-0
Publikováno v:
Thin Solid Films. :543-549
The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ef8f22fa946cb8f5cea2db9558b9d41
https://doi.org/10.1016/s0040-6090(97)00490-2
https://doi.org/10.1016/s0040-6090(97)00490-2
Publikováno v:
1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314).
CMP processes are known to be erratic and unstable. A simple control strategy is to predict the run-to-run process removal rate and then adjust the processing time based on the prediction. EWMA and PCC techniques are two most often used prediction te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db87838c138914db9d9e347c2c174d98
https://doi.org/10.1109/issm.1999.808778
https://doi.org/10.1109/issm.1999.808778
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2341
A detailed study for the high density plasma chemical vapor deposition (HDP-CVD) process was presented to prevent metal distortion issues and metal corrosion risk. The deposition temperature increased and then saturated as the film deposited, based o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e156b5f80bbf5acce3311c8c50cb0de2
https://doi.org/10.1116/1.590915
https://doi.org/10.1116/1.590915
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2300
Chemical vapor deposition (CVD) W plugs have been widely used for device metallization with excellent conformity in small contacts/vias with high aspect ratio [J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides (Noyes, 199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560e19c89c2c7dfb3b7c85db951a723d
https://doi.org/10.1116/1.590908
https://doi.org/10.1116/1.590908
Publikováno v:
1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No99CH36314); 1999, p229-232, 4p