Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jovana Colvin"'
Autor:
Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, Jovana Colvin, B. Jonas Ohlsson, Rainer Timm, Reine Wallenberg, Lars Samuelson, Anders Gustafsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
Abstract To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the disl
Externí odkaz:
https://doaj.org/article/c00109321a4d4b138fade2186126ef5f
Autor:
Zhaoxia Bi, Jovana Colvin, Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Mikael Björk, Lars Samuelson
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Autor:
David Lindgren, Filip Lenrick, Anders Gustafsson, Axel R. Persson, Lars Samuelson, Rainer Timm, Jovana Colvin, Reine Wallenberg, Maryam Khalilian, Martin Rosén, B. Jonas Ohlsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations
Autor:
Rafal Ciechonski, B. Jonas Ohlsson, Anders Gustafsson, Lars Samuelson, Rainer Timm, Jovana Colvin
Publikováno v:
Physical Review Materials
Understanding formation and distribution of defects in GaN substrates and device layers is needed to improve device performance in rf and power electronics. Here we utilize conductive atomic force microscopy (c-AFM) for studying defect-related leakag
Autor:
Johan Knutsson, Andrea Troian, Matteo Amati, Anders Mikkelsen, James L. Webb, Rainer Timm, Sarah R. McKibbin, Luca Gregoratti, Hikmet Sezen, Jovana Colvin, Gaute Otnes, Magnus T. Borgström, Kai Dirscherl
Publikováno v:
Nano Letters
We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin
Autor:
Olof Hultin, Anders Gustafsson, Rainer Timm, Maryam Khalilian, Mats-Erik Pistol, Jonas Ohlsson, Reine Wallenberg, Jonas Johansson, Jovana Colvin, Filip Lenrick, Lars Samuelson, Zhaoxia Bi
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 16(30)
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substra
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
Autor:
Rainer Timm, Filip Lenrick, Rafal Ciechonski, Jovana Colvin, B. Jonas Ohlsson, Lars Samuelson, Anders Gustafsson, Maryam Khalilian, Anders Mikkelsen, Olof Hultin
Publikováno v:
Physical Review Materials
In this paper we present a process of forming monolithic GaN surface from an ordered nanowire array by means of material redistribution. This process, referred to as reformation, is performed in a conventional MOVPE crystal growth system with the gal
Autor:
Rainer Timm, Reine Wallenberg, Anders Gustafsson, Anders Mikkelsen, Kristian Storm, Olof Hultin, B. Jonas Ohlsson, Filip Lenrick, Bo Monemar, Lars Samuelson, Zhaoxia Bi, Taiping Lu, Ali Nowzari, Jovana Colvin
Publikováno v:
Nano letters. 19(5)
In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were ma
Autor:
Erik Lind, Rainer Timm, Jun Wu, Aein S. Babadi, Lars-Erik Wernersson, Sofie Yngman, Jovana Colvin, Daniel Jacobsson
Publikováno v:
Nano Letters. 16:2418-2425
In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization a
Autor:
Taiping Lu, Lars Samuelson, Zhaoxia Bi, Jovana Colvin, Bo Monemar, Elis Sjögren, Jonas Johansson, Neimantas Vainorius, Rainer Timm, Reine Wallenberg, Filip Lenrick, Anders Gustafsson
Publikováno v:
ACS Applied Materials & Interfaces
In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal–organic vapor phase epitaxy on a dome-l