Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jovan Trujillo"'
Autor:
E. J. Bawolek, Michael Marrs, Curtis D. Moyer, Jovan Trujillo, Gregory B. Raupp, Bryan D. Vogt, Rita Cordova
Publikováno v:
IEEE Transactions on Electron Devices. 58:3428-3434
Amorphous oxide semiconductor thin-film transistors on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based on a
Autor:
Barry O'Brien, Dirk Bottesch, Gregory B. Raupp, Curtis D. Moyer, Cynthia Bell, Edward J. Bawolek, David R. Allee, Jovan Trujillo, Sameer M. Venugopal, Rita Cordova, Michael Marrs, Douglas E. Loy
Publikováno v:
MRS Proceedings. 1287
A low temperature amorphous zinc indium oxide (ZIO) thin film transistor (TFT) backplane technology for high information content flexible organic light emitting diode (OLED) displays has been developed. We have fabricated 4.1-in. diagonal OLED backpl
Autor:
Gregory B. Raupp, David R. Allee, Curt Moyer, Shawn M. O¡¯Rourke, Jovan Trujillo, Sameer M. Venugopal, Barry O'Brien, Dirk Bottesch, Douglas E. Loy, Edward J. Bawolek, Michael Marrs, Scott K. Ageno, Jann Kaminski, Rita Cordova, Jeff Dailey
Publikováno v:
MRS Proceedings. 1030
Principal challenges to direct fabrication of high performance a-Si:H transistor arrays on flexible substrates include automated handling through bonding-debonding processes, substrate-compatible low temperature fabrication processes, management of d
Autor:
Shawn O'Rourke, Douglas Loy, Curt Moyer, Edward Bawolek, Scott Ageno, Barry O'Brien, Michael Marrs, Dirk Bottesch, Jeff Dailey, Rob Naujokaitas, Jann Kaminski, David Allee, Sameer Venugopal, Jovan Trujillo, Rita Cordova, Mark Richards, Nicholas Colaneri, Gregory B. Raupp
Publikováno v:
ECS Meeting Abstracts. :2322-2322
not Available.
Autor:
Rita Cordova, Scott K. Ageno, Shawn M. O'Rourke, Dirk Bottesch, Barry O'Brien, Ke Long, Jovan Trujillo, Gregory B. Raupp, Sameer M. Venugopal, Daniel Toy, Nicholas Colaneri, Mark Richards, Douglas E. Loy, Curt Moyer, David R. Allee, Edward J. Bawolek, Michael Marrs, Jann Kaminski, Jeff Dailey
Publikováno v:
SID Symposium Digest of Technical Papers. 39:422
A low temperature, 180 °C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are