Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jousseaume, Yann"'
Autor:
Jousseaume, Yann, Kumar, Piyush, Bathen, Marianne Etzelmüller, Cauwet, François, Grossner, Ulrike, Ferro, Gabriel
Publikováno v:
International conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.7-12
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while
Externí odkaz:
http://arxiv.org/abs/2410.07680
Autor:
Alyabyeva, Natalia, Ding, Jacques, Sauty, Mylène, Woerle, Judith, Jousseaume, Yann, Ferro, Gabriel, McCallum, Jeffrey C., Peretti, Jacques, Johnson, Brett C., Rowe, Alistair C. H.
Publikováno v:
Physica Status Solidi (b) 260, 2200356 (2023)
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The
Externí odkaz:
http://arxiv.org/abs/2208.08775
Publikováno v:
In Journal of Crystal Growth 1 September 2023 617
Publikováno v:
In Journal of Crystal Growth 1 September 2022 593
Autor:
Alyabyeva, Natalia, Ding, Jacques, Sauty, Mylène, Woerle, Judith, Jousseaume, Yann, Ferro, Gabriel, McCallum, Jeffrey C., Peretti, Jacques, Johnson, Brett C., Rowe, Alistair C. H.
Publikováno v:
Physica Status Solidi (B); May2023, Vol. 260 Issue 5, p1-6, 6p
Autor:
Jousseaume, Yann, Cauwet, François, Woerle, Judith, Grossner, Ulrike, Aslanidou, Sofia, Rius, Gemma, Godignon, Philippe, Ferro, Gabriel
Publikováno v:
Materials Science Forum; May 2023, Vol. 1089 Issue: 1 p9-14, 6p
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; May 2023, Vol. 342 Issue: 1 p73-78, 6p
Publikováno v:
Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p8-12, 5p
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