Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Jounghyun Yim"'
Autor:
Seongwon Joo, Jounghyun Yim, Shinwoong Kim, Inhyo Ryu, Choi Inyoung, Jong-Dae Bae, Chia-Hsin Wu, Huijung Kim, Ji-Soo Chang, Myoung-Gyun Kim, Sang-Yun Lee, Ji-Young Lee, Sang-Wook Han, Thomas Byunghak Cho, Chris Hunter, Won Ko, Byeongwan Ha, Taewan Kim, Daeyoung Yoon, Michael J. Cowell, Alexander Thoukydides, Jacob Christopher Sharpe, Liu Qing
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents a 28nm CMOS wireless connectivity combo IC with a 2×2 reconfigurable WiFi transceiver, and a BT 5.0 slim SOC. The WiFi transceiver can deliver 2G/5G Psat of 26.5/25.5dBm and 2G/5G NF of 3.6/3.8dB respectively, supporting contiguo
Autor:
Sung-Gi Yang, Inhyo Ryu, Jounghyun Yim, Jong-Dae Bae, Ho-Jin Park, Heeseon Shin, Sangsoo Ko, Taewan Kim, Byoungjoong Kang, Won Ko
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:2178-2191
In this paper, an ultra-wideband (UWB) upconverter is proposed that has automatic self-calibrating circuits for the in-phase/quadrature mismatch correction and the local (LO) leakage suppression. The proposed self-calibrating circuits have been devis
Autor:
Jinho Yang, Jeonghyun Cha, Jinsung Choi, Jingook Kim, Bumman Kim, Daehyun Kang, Dongsu Kim, Jounghyun Yim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:2679-2690
This paper demonstrates a new polar transmitter architecture, which uses the digitized envelope signal to control the drain voltage of a switching mode power amplifier (PA). It is based on a novel polar modulation using the constant envelope modulate
Publikováno v:
Microwave and Optical Technology Letters. 49:578-581
A new structure planar-type dielectric resonator (PDR) with high Q has been developed using an LTCC process. The PDR consists of two different dielectric constant materials, a hollow patch center ground plane in the middle of the cavity layer and shi
Publikováno v:
Microwave and Optical Technology Letters. 44:533-536
A new planar-type dielectric resonator (PDR) with a high unloaded Q has been developed using LTCC Technology. The PDR consists of two different dielectric constant materials, high dielectric LTCC cavity (ϵr = 36) acting as a resonator and low dielec
Autor:
Jounghyun Yim, Bumman Kim, Kyounghoon Im, Huijung Kim, Youngwoong Kim, Seogtae Han, Seonghan Ryu
Publikováno v:
Microwave and Optical Technology Letters. 39:333-336
A Ka-band MMIC VCO utilizing 0.15-μm T-gate GaAs P-HEMT technology is presented. The VCO exhibits a low-phase noise property with wide tuning range of up to 3 GHz. A balanced buffer amplifier is also developed to ensure that the output power is high
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:382-384
A highly efficient push-pull class D power amplifier (PA) with a high operation voltage is presented. The high voltage is realized by stacking dc biases of two push-pull amplifiers through the virtual ground point, while the radio frequency powers ar
Publikováno v:
Microwave and Optical Technology Letters. 35:414-416
A new planar-type dielectric resonator (PDR) with a high Q has been developed. The PDR is fabricated by eching the GaAs substrate with an air gap around resonator and one side ground plane to reduce metal loss and facilitate integration. The realized
Autor:
Sung-Gi Yang, Taewan Kim, Inhyo Ryu, Won Ko, Heeseon Shin, Jounghyun Yim, Sangsoo Ko, Jong-Dae Bae, Hojin Park, Byoungjoong Kang
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
A 3.1–4.7GHz and 6.3–9GHz RF transmitter fabricated in a 65nm CMOS technology and packaged with a Wafer-level Fabricated Package (WFP) is presented. For high frequency and wideband performances, all the effects of package are considered and loopb
Autor:
Hojin Park, Taewan Kim, Heeseon Shin, Sangsoo Ko, Sung-Gi Yang, Byoungjoong Kang, Won Ko, Jounghyun Yim, Inhyo Ryu, Jong-Dae Bae
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
A low-noise and high-gain ultra wideband (UWB) receiver was developed using a 65nm CMOS technology and a wafer-level fabricated package. In order to enhance the gain and noise figure over a wide frequency band, the resistive feedback amplifier and tw