Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Joung-June Park"'
Publikováno v:
1996 IEEE International SOI Conference Proceedings.
We developed a new SOI device with a self-aligned polysilicon gate on the recessed channel region and obtained low source/drain resistance, symmetrical I/sub D/-V/sub DS/ characteristics and high breakdown voltage (BV/sub DSS/). The self-alignment wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d485d601c2dccbb1bc2902b1d1d9d59e
https://doi.org/10.1109/soi.1996.552524
https://doi.org/10.1109/soi.1996.552524
Publikováno v:
1996 IEEE International SOI Conference Proceedings; 1996, p122-123, 2p