Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Joucken, Frederic"'
Autor:
Ge, Zhehao, Wong, Dillon, Lee, Juwon, Joucken, Frederic, Quezada-Lopez, Eberth A., Kahn, Salman, Tsai, Hsin-Zon, Taniguchi, Takashi, Watanabe, Kenji, Wang, Feng, Zettl, Alex, Crommie, Michael F., Velasco Jr, Jairo
Publikováno v:
Nano Letters 2021
Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of qua
Externí odkaz:
http://arxiv.org/abs/2207.05938
Autor:
Joucken, Frédéric, Davenport, John L., Ge, Zhehao, Quezada-Lopez, Eberth A., Taniguchi, Takashi, Watanabe, Kenji, Velasco Jr., Jairo, Lagoute, Jérôme, Kaindl, Robert A.
Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often complicated by the difficulty in experimentally obtaining a suitable expe
Externí odkaz:
http://arxiv.org/abs/2206.08951
Autor:
Kaladzhyan, Vardan, Pinon, Sarah, Joucken, Frédéric, Ge, Zhehao, Quezada-Lopez, Eberth A., Taniguchi, T., Watanabe, K., Velasco Jr, Jairo, Bena, Cristina
Publikováno v:
Phys. Rev. B 104, 155418 (2021)
We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA) and rhombohedral (ABC) graphite. For rhombohedral graphite we recover
Externí odkaz:
http://arxiv.org/abs/2105.08723
Autor:
Kaladzhyan, Vardan, Joucken, Frédéric, Ge, Zhehao, Quezada-Lopez, Eberth A., Taniguchi, Takashi, Watanabe, Kenji, Velasco Jr, Jairo, Bena, Cristina
We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal warping terms. We introduce four different types of impurities localized on the A and B
Externí odkaz:
http://arxiv.org/abs/2105.01068
Autor:
Joucken, Frédéric, Bena, Cristina, Ge, Zhehao, Quezada-Lopez, Eberth A., Ducastelle, François, Tanagushi, Takashi, Watanabe, Kenji, Velasco Jr, Jairo
Publikováno v:
Phys. Rev. Lett. 127, 106401 (2021)
The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the exis
Externí odkaz:
http://arxiv.org/abs/2104.15105
Autor:
Joucken, Frederic, Bena, Cristina, Ge, Zhehao, Quezada-Lopez, Ebert A., Pinon, Sarah, Kaladzhyan, Vardan, Taniguchi, Takashi, Watanabe, Kenji, Ferreira, Aires, Velasco Jr, Jairo
Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amo
Externí odkaz:
http://arxiv.org/abs/2104.10620
Autor:
Ge, Zhehao, Joucken, Frederic, Quezada, Eberth, da Costa, Diego R., Davenport, John, Giraldo, Brian, Taniguchi, Takashi, Watanabe, Kenji, Kobayashi, Nobuhiko P., Low, Tony, Velasco Jr, Jairo
Publikováno v:
Nano Letters 2020
Electrostatically defined quantum dots (QDs) in Bernal stacked bilayer graphene (BLG) are a promising quantum information platform because of their long spin decoherence times, high sample quality, and tunability. Importantly, the shape of QD states
Externí odkaz:
http://arxiv.org/abs/2012.04266
Autor:
Joucken, Frédéric, Ge, Zhehao, Quezada-López, Eberth A., Davenport, John L., Watanabe, Kenji, Taniguchi, Takashi, Velasco Jr, Jairo
Publikováno v:
Phys. Rev. B 101, 161103 (2020)
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and anisotropic ba
Externí odkaz:
http://arxiv.org/abs/1911.12853
Autor:
Joucken, Frédéric, Quezada-López, Eberth A., Avila, Jose, Chen, Chaoyu, Davenport, John L., Chen, Hechin, Watanabe, Kenji, Taniguchi, Takashi, Asensio, Maria Carmen, Velasco Jr, Jairo
Publikováno v:
Phys. Rev. B 99, 161406(R), 2019
Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure st
Externí odkaz:
http://arxiv.org/abs/1904.11080
Autor:
Joucken, Frédéric, Avila, Jose, Ge, Zhehao, Quezada, Eberth, Yi, Hemian, Goff, Romaric Le, Baudin, Emmanuel, Davenport, John L., Watanabe, Kenji, Taniguchi, Takashi, Asensio, Maria Carmen, Velasco Jr, Jairo
Publikováno v:
Nano Lett. 2019, 19, 4, 2682
Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to non-invasively pro
Externí odkaz:
http://arxiv.org/abs/1904.09484