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pro vyhledávání: '"Jospen Koshapa"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 17:643-646
Isotype and anisotype heterojunction Ge/Si photodetectors have been made by depositing Ge layer onto monocrystalline Si using vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG laser puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a87e1cfa19926850406d49ee76f8809
https://doi.org/10.1007/s10854-006-0012-5
https://doi.org/10.1007/s10854-006-0012-5
Publikováno v:
Journal of Materials Science: Materials in Electronics; Aug2006, Vol. 17 Issue 8, p643-646, 4p