Výsledky vyhledávání

InAs Quantum Dot Molecule based Scalable Materials Platform

Autor: Henry Carfagno, Lauren McCabe, Joshua Zide, Matthew Doty

Publikováno v: Quantum 2.0 Conference and Exhibition.

We report advancements in material growth, device design, and device fabrication that facilitate development of a scalable platform for quantum photonics using site-templated wavelength-tunable InAs quantum dot molecules to overcome spatial and spect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7fdb9f384ecf015ff7ab2c8c84bcf58
https://doi.org/10.1364/quantum.2022.qw2a.31

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Akademický článek

Effects of Co-Solvents on the Performance of PEDOT:PSS Films and Hybrid Photovoltaic Devices

Autor: Abhishek Iyer, James Hack, David Alejandro Angel Trujillo, Bo Tew, Joshua Zide, Robert Opila

Publikováno v: Applied Sciences, Vol 8, Iss 11, p 2052 (2018)

Hybrid silicon solar cells have been fabricated by the spin coating of conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a p-type contact on textured n-type crystalline silicon wafers. The effect of adding co-s

Externí odkaz: https://doaj.org/article/2f9da501f4434d929d35f01132f2d7aa

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Optical dielectric function and electronic band structure of dilute GaAsBi-GaAs multiquantum wells by using variable angle spectroscopic ellipsometry

Autor: Muhammad Zeewaqar Manzoor, Joshua Zide, Zahoor Ahmad, Hassan M. Khan, Saeed Ahmad Buzdar, Yuejing Wang, Hafeez Ullah, Zahida Batool

Publikováno v: Optik. 267:169745

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::190e2c85c720757019c021e60e3460db
https://doi.org/10.1016/j.ijleo.2022.169745

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Impacts of growth conditions on InAlBiAs electrical properties and morphology

Autor: Wilder Acuna, Joshua Zide, James Bork

Publikováno v: Journal of Vacuum Science & Technology A. 40:042702

As a highly mismatched alloy class, dilute bismuthide materials exhibit strong valence band-Bi impurity state interactions, leading to large bandgap bowing parameters and strong spin–orbit coupling due to the inclusion of Bi in III-V semiconductors

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18aaa642932e23de964ca90708be9637
https://doi.org/10.1116/6.0001894

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