Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Joshua Perozek"'
Publikováno v:
DRC
GaN vertical finFETs are capable of high breakdown voltages and large current density without the need for regrowth or p-type doping. These attributes make them a promising candidate for next-generation high-frequency power applications. Here, we dem
Autor:
Richard J. Molnar, Donna-Ruth Yost, Corey Stull, Ryan C. Johnson, Tomas Palacios, C. Galbraith, Matthew T. Cook, Beijia Zhang, C. Chen, WeiLin Hu, Craig L. Keast, Jeffrey Knechtl, Jeffrey W. Daulton, Joshua Perozek, Jeffrey S. Herd, Gianni Pinelli, Shireen Warnock
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
In this paper we present a fully CMOS-compatible fabrication process for GaN-on-Si monolithic microwave integrated circuits (MMICs) on 200-mm-diameter wafers. This process also enables wafer-level 3D integration of GaN MMICs with Si CMOS circuits to
Publikováno v:
Semiconductor Science and Technology. 36:054001
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense ap
Autor:
Dongfei Pei, Joshua Perozek, Hal Emmer, John Niroula, Mark Dipsey, Ahmad Zubair, Nadim Chowdhury, Tomas Palacios, Bin Lu
Publikováno v:
Publons
This paper summarizes recent progress on the development of high frequency power switches based on Gallium Nitride (GaN). Both lateral and vertical device structures will be discussed, as well as a new all-GaN complementary gate driver technology whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4c3aa8cff5e129895d2ada9122a37ef
https://publons.com/publon/50491518/
https://publons.com/publon/50491518/