Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Joshua P. Samberg"'
Publikováno v:
Materials Research Bulletin. 51:356-360
For the field of energy storage, nanostructured lead oxide (PbO) shows immense potential for increased specific energy and deep discharge for lead acid battery technologies. In this work, PbO networks composed of single crystalline nanosheets were sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4261853911454d39ff15cf8409564e9d
https://doi.org/10.1016/j.materresbull.2013.12.050
https://doi.org/10.1016/j.materresbull.2013.12.050
Autor:
Geoffrey K. Bradshaw, C. Zachary Carlin, Kenneth M. Edmondson, W. Hong, Joshua P. Samberg, Nasser H. Karam, Christopher M. Fetzer, Peter C. Colter, Salah M. Bedair
Publikováno v:
IEEE Journal of Photovoltaics. 4:614-619
Lattice-matched multiple quantum wells (MQWs) consisting of InxGa1-xAs wells with very thin GaAs0.2P0.8 barriers have been incorporated into a GaInP/GaAs tandem solar cell. InGaAs/GaAsP MQWs increase the short-circuit current of the GaAs cell by exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e6fd3f295f1ee20d9699845e676817
https://doi.org/10.1109/jphotov.2013.2294750
https://doi.org/10.1109/jphotov.2013.2294750
Autor:
Joshua P. Samberg, Geoffrey K. Bradshaw, Peter C. Colter, Conrad Zachary Carlin, Salah M. Bedair
Publikováno v:
IEEE Transactions on Electron Devices. 60:2532-2536
Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is observed that the spectral response depends critically upon the width of the GaAsP barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6d5d82c126c0074cb92633c6abe15a
https://doi.org/10.1109/ted.2013.2268421
https://doi.org/10.1109/ted.2013.2268421
Autor:
Conrad Zachary Carlin, Geoffrey K. Bradshaw, Nadia A. El-Masry, Joshua P. Samberg, Salah M. Bedair, Peter C. Colter
Publikováno v:
IEEE Journal of Photovoltaics. 3:278-283
Multiple quantum wells (MQW) lattice matched to GaAs consisting of In0.14Ga0.76As wells balanced with GaAs0.24P0.76 barriers have been used to extend the absorption of GaAs subcells to longer wavelengths for use in an InGaP/GaAs/Ge triple-junction ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68015516d0b5102803055b99b11c69f2
https://doi.org/10.1109/jphotov.2012.2216858
https://doi.org/10.1109/jphotov.2012.2216858
Autor:
Salah M. Bedair, Peter C. Colter, Geoffrey K. Bradshaw, Joshua P. Samberg, Conrad Zachary Carlin
Publikováno v:
Journal of Electronic Materials. 42:912-917
Strained-layer superlattice (SLS) structures, such as InGaAs/GaAsP lattice matched to GaAs, have shown great potential in absorption devices such as photodetectors and triple-junction photovoltaic cells. However, until recently they have been somewha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8287259176d4fb509d301e6e59faca17
https://doi.org/10.1007/s11664-012-2375-0
https://doi.org/10.1007/s11664-012-2375-0
Autor:
Pavel Frajtag, Nadia A. El-Masry, Tanja Paskova, A. M. Hosalli, Salah M. Bedair, Joshua P. Samberg, Peter C. Colter
Publikováno v:
Journal of Crystal Growth. 352:203-208
We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in regions where a high dislocation density is present in the GaN films grown on sapphire subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc62b1828efb8fe4da7ca8ab0e2c27b
https://doi.org/10.1016/j.jcrysgro.2011.12.055
https://doi.org/10.1016/j.jcrysgro.2011.12.055
Autor:
Amir Kajbafvala, Joshua P. Samberg, Sayed Khatiboleslam Sadrnezhaad, Asieh Paravar, Hamed Ghorbani, Ehsan Kajbafvala
Publikováno v:
Superlattices and Microstructures. 51:512-522
In this study, two different chemical solution methods were used to synthesize Zinc oxide nanostructures via a simple and fast microwave assisted method. Afterwards, the photocatalytic performances of the produced ZnO powders were investigated using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd6f43972949380085e084d7fbbbaa4
https://doi.org/10.1016/j.spmi.2012.01.015
https://doi.org/10.1016/j.spmi.2012.01.015
Autor:
Joshua P. Samberg, Amir Kajbafvala, Hamed Ghorbani, Sayed Khatiboleslam Sadrnezhaad, Ehsan Kajbafvala
Publikováno v:
Materials Letters. 67:342-345
ZnO nano-architectures were produced with the aid of a fast, simple and low cost microwave-assisted synthesis method. Solid semispherical ZnO nanoparticles on the order of 600 nm in diameter along with rice-like ZnO nanorods 95 nm thick were produced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::336e028c03321981b980487b8607060a
https://doi.org/10.1016/j.matlet.2011.09.106
https://doi.org/10.1016/j.matlet.2011.09.106
Publikováno v:
Journal of Crystal Growth. 322:27-32
We report on the epitaxial growth of GaN films on GaN nanowires. GaN nanowires were prepared by the mask-less dry etching technique. The etched, then annealed nanowires form semi-polar and non-polar plane facets with hexagonal symmetry. The different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea323a232034328b64c87847db0c8e2
https://doi.org/10.1016/j.jcrysgro.2011.02.032
https://doi.org/10.1016/j.jcrysgro.2011.02.032
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
GaAs cells containing multiple quantum wells (MQW) of strained InGaAs/GaAsP can enhance efficiency in multijunction solar cells. Determination of carrier recombination lifetime in the InGaAs well is useful to understand material quality and carrier t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f1806c18c001b67c7267ffd0772f6f
https://doi.org/10.1109/pvsc.2013.6744143
https://doi.org/10.1109/pvsc.2013.6744143