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of 3
pro vyhledávání: '"Josh Tuttle"'
Autor:
Josh Tuttle, Xibin Zhou, Yunqiang Zhang, Kevin Lucas, Guangming Xiao, Kevin Hooker, Aram Kazarian
Publikováno v:
SPIE Proceedings.
EUV lithography is viewed as a highly desirable technology for 5nm and 7nm node patterning cost reduction and process simplicity. However, for the 5nm and 7nm nodes EUV not only needs to function in a low-K1 resolution environment but has several new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b65e6f93dcbefe2fd140fcdf80dcba8
https://doi.org/10.1117/12.2258186
https://doi.org/10.1117/12.2258186
Publikováno v:
SPIE Proceedings.
An important need in the Optical Proximity Correction (OPC) process is to be able to identify problem correction areas. However, many times when a problem correction area is identified, multiple instances of the same problem occur throughout the corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb8d50761e28c8c45e44584730887c5
https://doi.org/10.1117/12.810062
https://doi.org/10.1117/12.810062
Autor:
Robert Lugg, James P. Shiely, Rick Farnbach, Mike Rieger, Dave Gerold, Matt St. John, Randy Brown, Kevin Lucas, Josh Tuttle
Publikováno v:
SPIE Proceedings.
The upcoming 45nm device node is a point at which newer field-based (i.e., dense pixel-based) OPC simulation methods may begin to show advantages over sparse-sampling ("flash") simulation methods. Field-based simulation provides computational efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103f183cca5041f8cff7fa9ca6cab4a6
https://doi.org/10.1117/12.721593
https://doi.org/10.1117/12.721593