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New methodologies for lower-K1 EUV OPC and RET optimization

Autor: Josh Tuttle, Xibin Zhou, Yunqiang Zhang, Kevin Lucas, Guangming Xiao, Kevin Hooker, Aram Kazarian

Publikováno v: SPIE Proceedings.

EUV lithography is viewed as a highly desirable technology for 5nm and 7nm node patterning cost reduction and process simplicity. However, for the 5nm and 7nm nodes EUV not only needs to function in a low-K1 resolution environment but has several new

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b65e6f93dcbefe2fd140fcdf80dcba8
https://doi.org/10.1117/12.2258186

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Model based pattern matching

Autor: Mathias Boman, Josh Tuttle, Lawrence S. Melvin

Publikováno v: SPIE Proceedings.

An important need in the Optical Proximity Correction (OPC) process is to be able to identify problem correction areas. However, many times when a problem correction area is identified, multiple instances of the same problem occur throughout the corr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6eb8d50761e28c8c45e44584730887c5
https://doi.org/10.1117/12.810062

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Comparing traditional OPC to field-based OPC for 45-nm node production

Autor: Robert Lugg, James P. Shiely, Rick Farnbach, Mike Rieger, Dave Gerold, Matt St. John, Randy Brown, Kevin Lucas, Josh Tuttle

Publikováno v: SPIE Proceedings.

The upcoming 45nm device node is a point at which newer field-based (i.e., dense pixel-based) OPC simulation methods may begin to show advantages over sparse-sampling ("flash") simulation methods. Field-based simulation provides computational efficie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::103f183cca5041f8cff7fa9ca6cab4a6
https://doi.org/10.1117/12.721593

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