Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Josephine J. Sheng"'
Autor:
Malcolm S. Carroll, Josephine J. Sheng, Sang M. Han, Manual J. Romero, Qiming Li, Darius Kuciauskas, Jeffrey G. Cederberg, Darin Leonhardt, Daniel J. Friedman
Publikováno v:
Thin Solid Films. 519:7664-7671
Nucleation and eventual coalescence of Ge islands, grown out of 5 to 7 nm diameter openings in chemical SiO 2 template and epitaxially registered to the underlying Si substrate, have been shown to generate a low density of threading dislocations (≪
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2074a4225dd59735311d958deb0983c3
https://doi.org/10.1016/j.tsf.2011.05.044
https://doi.org/10.1016/j.tsf.2011.05.044
Autor:
Josephine J. Sheng, Sang M. Han, David M. Wilt, Seth M. Hubbard, David Chapman, Stephen J. Polly, Christopher Kerestes, Christopher G. Bailey
Publikováno v:
MRS Proceedings. 1432
The insertion of nanostructured materials (such as quantum wells, wires, and dots) into the intrinsic region of p-i-n solar cells introduces an intermediate band within the bandgap of the host material. It has been shown that the sub-bandgap conversi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5373af0a8a077966c7758827407cc391
https://doi.org/10.1557/opl.2012.1139
https://doi.org/10.1557/opl.2012.1139
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:041202
Demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1262aaa92e69508478537b883f909e0f
https://doi.org/10.1116/1.4921590
https://doi.org/10.1116/1.4921590
Autor:
Tom M. Bauer, Malcolm S. Carroll, Darwin K. Serkland, Robert Koudelka, Josephine J. Sheng, Kenton D. Childs, John F. Klem, Samuel D. Hawkins, Desta Bolles, Kent M. Geib, Rupal K. Patel
The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9818012d9e0f9eefee484f9c3fdeaa3
https://doi.org/10.2172/949014
https://doi.org/10.2172/949014
Autor:
Luke N. Brewer, Malcolm S. Carroll, Daniel Lee Barton, Josephine J. Sheng, Roberto G. Dunn, Wei Pan, James Clifford Banks, Jason C. Verley
The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ae2a7e2db292f47ef4eda9b27ce322
https://doi.org/10.2172/896555
https://doi.org/10.2172/896555
Autor:
Josephine J. Sheng, Malcolm S. Carroll
Publikováno v:
MRS Proceedings. 891
Demand for low cost and high density near infrared (NIR) detection has motivated the development and use of germanium on silicon (Ge/Si) heterostructures to extend the optoelectronic application of Si technology. Ge/Si structures are currently being
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9cadcb4538611c143d66bb1c8adc3a9
https://doi.org/10.1557/proc-0891-ee12-09
https://doi.org/10.1557/proc-0891-ee12-09
Autor:
Steven W. Johnston, Malcolm S. Carroll, Darin Leonhardt, Jeffrey G. Cederberg, Josephine J. Sheng, Sang M. Han
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:051201
High-quality Ge-on-Si heterostructures have been explored for many applications, including near infrared photodetectors and integration with III–V films for multijunction photovoltaics. However, the lattice mismatch between Ge and Si often leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99851cc0d0f7e06c3e3b61bf0e4b4d5e
https://doi.org/10.1116/1.4816488
https://doi.org/10.1116/1.4816488