Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Joseph William Hillier"'
Autor:
Kouta Ibukuro, Joseph William Hillier, Fayong Liu, Muhammad Khaled Husain, Zuo Li, Isao Tomita, Yoshishige Tsuchiya, Harvey Nicholas Rutt, Shinichi Saito
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055025-055025-13 (2020)
While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the c
Externí odkaz:
https://doaj.org/article/e272536b607f47b5aaa03977c0d41f2f
Autor:
Moïse Sotto, Hideo Arimoto, Kapil Debnath, David J. Thomson, James Byers, Shinichi Saito, Joseph William Hillier, Kian Shen Kiang, Martin D. B. Charlton, Graham T. Reed, Muhammad Husain
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59d6ff964dd7078cb294a4ed052f4d21
https://doi.org/10.3389/fphy.2021.659585
https://doi.org/10.3389/fphy.2021.659585
Autor:
Isao Tomita, Joseph William Hillier, Fayong Liu, Yoshishige Tsuchiya, Muhammad Husain, Shinichi Saito, Kouta Ibukuro, Zuo Li, Harvey N. Rutt
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f0ed2544f501007d90f7e27e98bd85e
https://www.frontiersin.org/article/10.3389/fphy.2019.00152/full
https://www.frontiersin.org/article/10.3389/fphy.2019.00152/full
Autor:
Zuo Li, Harvey N. Rutt, Moïse Sotto, Fayong Liu, Yoshishige Tsuchiya, Kouta Ibukuro, Isao Tomita, Joseph William Hillier, Shinichi Saito, Muhammad Husain
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 115101-115101-12 (2020)
The need for hardware random number generators (HRNGs) that can be integrated in a silicon (Si) complementary-metal-oxide-semiconductor (CMOS) platform has become increasingly important in the era of the Internet-of-Things (IoT). Si MOSFETs exhibitin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa7745dbb013f45983fb209ddcbefc6
https://doaj.org/article/5069d148805e4e168a8e1df58705db3d
https://doaj.org/article/5069d148805e4e168a8e1df58705db3d
Autor:
Shinichi Saito, Isao Tomita, Kouta Ibukuro, Zuo Li, Fayong Liu, Harvey N. Rutt, Joseph William Hillier, Muhammad Husain, Yoshishige Tsuchiya
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055025-055025-13 (2020)
While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb72ba3fc9b78b23991d10c62e6f62c5
https://doaj.org/article/e272536b607f47b5aaa03977c0d41f2f
https://doaj.org/article/e272536b607f47b5aaa03977c0d41f2f
Autor:
Yoshishige Tsuchiya, Joseph William Hillier, Shinichi Saito, Zuo Li, Harvey N. Rutt, Kouta Ibukuro, Fayong Liu, Isao Tomita, Muhammad Husain
Publikováno v:
Nanotechnology. 29:475201
Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations. However, previous methods required statistical a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43ddf07a598f528b27fe0498afbc6406
https://doi.org/10.1088/1361-6528/aadfa6
https://doi.org/10.1088/1361-6528/aadfa6