Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Joseph T. Scheper"'
Publikováno v:
Chemistry of Materials. 11:3490-3496
The atmospheric pressure chemical vapor deposition of titanium aluminum nitride films was accomplished using a three-precursor system comprised of titanium tetrachloride, tert-butylamine, and trimethylaluminum at a substrate temperature of 600 °C. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6144e1abe4d1f97b0bc7fe13142fb243
https://doi.org/10.1021/cm990157u
https://doi.org/10.1021/cm990157u
Autor:
Glenn P. A. Yap, a Charles H. Winter, Kumudini C. Jayaratne, b Louise M. Liable-Sands, Arnold L. Rheingold, Joseph T. Scheper
Publikováno v:
Inorganic Chemistry. 38:4354-4360
Treatment of niobium pentachloride with cyclohexylphosphine and phenylphosphine in dichloromethane afforded octachlorotetrakis(cyclohexylphosphine)diniobium(IV) (85%) and octachlorotetrakis(phenylp...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0636b25fa652c07a1f628ab3c791ebc
https://doi.org/10.1021/ic990198s
https://doi.org/10.1021/ic990198s
Publikováno v:
Materials Science in Semiconductor Processing. 2:149-157
The deposition of titanium nitride films from single-source precursors bearing alkylhydrazine-derived ligands is reported. The complex [Ti2Cl4(NN(CH3)2)2(NH2N(CH3)2)2] sublimes at 140–150°C (0.1 mmHg) and affords titanium nitride films in a chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b410b185883e44db4dec7763646ce6a
https://doi.org/10.1016/s1369-8001(99)00012-8
https://doi.org/10.1016/s1369-8001(99)00012-8
Autor:
b Louise M. Liable-Sands, Glenn P. A. Yap, Arnold L. Rheingold, Kumudini C. Jayaratne, a Charles H. Winter, Joseph T. Scheper
Publikováno v:
ChemInform. 30
Treatment of niobium pentachloride with cyclohexylphosphine and phenylphosphine in dichloromethane afforded octachlorotetrakis(cyclohexylphosphine)diniobium(IV) (85%) and octachlorotetrakis(phenylp...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f13a8035d06831d7be9626a23d30568
https://doi.org/10.1002/chin.199949026
https://doi.org/10.1002/chin.199949026
Precursors for the Chemical Vator Deposition of Titanium Nitride and Titanium Aluminum Nitride Films
Publikováno v:
MRS Proceedings. 495
Titanium nitride and ternary alloys thereof are of significant interest due to their hardness, chemical resistance, and good electrical conductivity. We report the synthesis, structure, and properties of several new precursors to titanium nitride tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234c1081c1d04839a4323777fff75614
https://doi.org/10.1557/proc-495-95
https://doi.org/10.1557/proc-495-95
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