Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Joseph R. Monkowski"'
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
This paper presents a new type of control scheme and device for controlling gas flow into semiconductor process chambers. The key component of the Gas Flow Controller (GFC) is a high-precision valve with an integrated position sensor, which is used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3d11d0d69214391467050e9c77c4b3
https://doi.org/10.1109/asmc.2011.5898201
https://doi.org/10.1109/asmc.2011.5898201
Publikováno v:
MRS Proceedings. 203
In the next generation of semiconductor devices, minimum dimensions will be smaller, aspect ratios (height to width) of devices features will be larger, and BPSG dielectrics will be challenged to deal with these changes. A new process, which integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2185098a3b234c49cee2fcdb3b5a6d2d
https://doi.org/10.1557/proc-203-221
https://doi.org/10.1557/proc-203-221
Publikováno v:
Journal of The Electrochemical Society. 133:762-769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a99686c01ffbf9984efe92b46ed1114b
https://doi.org/10.1149/1.2108671
https://doi.org/10.1149/1.2108671
Publikováno v:
Journal of The Electrochemical Society. 133:142-147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35675a31613147b4abcc32426e244fe9
https://doi.org/10.1149/1.2108510
https://doi.org/10.1149/1.2108510
Publikováno v:
Journal of The Electrochemical Society. 132:2031-2033
Etablissement des profils de concentration des impuretes (Cu et Au) incorporees dans du silicium, apres oxydation, par HCl a des temperatures comprises entre 1173 et 1473 K, de la surface. Description quantitative du mouvement de l'impurete durant l'
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd9371cb5ce2d2279deaf7b481afaba
https://doi.org/10.1149/1.2114277
https://doi.org/10.1149/1.2114277
Autor:
Robert T. Zahour, Joseph R. Monkowski
Publikováno v:
20th International Reliability Physics Symposium.
Particulate contamination present on the silicon surface was found to react or flux with the growing SiO2 during oxidation, creating localized regions high in ionic contamination. These regions, which are typically one micrometer or less in diameter,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc92e649aa3beb241ff264efabd32bf
https://doi.org/10.1109/irps.1982.361936
https://doi.org/10.1109/irps.1982.361936
Publikováno v:
MRS Proceedings. 131
Chemical Vapor Deposition (CVD) of thin films for microelectronic devices has historically used source materials that are gases at room temperature [1]. The decision to use gases was largely a practical one based on the relative ease with which the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798acee7d556829df9436a3132d55055
https://doi.org/10.1557/proc-131-319
https://doi.org/10.1557/proc-131-319
Autor:
Joseph R. Monkowski
Publikováno v:
Treatise on Clean Surface Technology ISBN: 9781468491289
An interesting situation exists in the microelectronics field with regard to particulate contamination. A large number of vendors have as their primary purpose the supplying of clean rooms and clean-room accessories to the semiconductor industry. Int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f064e17ba9c4a359c21d2eefe6f6103
https://doi.org/10.1007/978-1-4684-9126-5_6
https://doi.org/10.1007/978-1-4684-9126-5_6
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