Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Joseph Ngugi Kahiu"'
Autor:
Joseph Ngugi Kahiu, Samuel Kimani Kihoi, Hyunji Kim, U. Sandhya Shenoy, D. Krishna Bhat, Ho Seong Lee
Publikováno v:
ACS Applied Energy Materials. 6:4305-4316
Autor:
Hyunji Kim, Samuel Kimani Kihoi, U. Sandhya Shenoy, Joseph Ngugi Kahiu, Dong Hyun Shin, D. Krishna Bhat, Ho Seong Lee
Publikováno v:
Journal of Materials Chemistry A. 11:8119-8130
The thermoelectric figure of merit ZT of GeTe is increased by about 77% through the optimized carrier concentration and hyperconverged electronic structure by Bi doping and CuInTe2 alloying.
Autor:
Samuel Kimani Kihoi, U. Sandhya Shenoy, Joseph Ngugi Kahiu, Hyunji Kim, D. Krishna Bhat, Ho Seong Lee
Publikováno v:
Sustainable Energy & Fuels. 7:1916-1929
Enhanced phonon scattering and band structure engineering improve the thermoelectric properties of SnTe-based thermoelectric materials.
Autor:
Samuel Kimani Kihoi, U. Sandhya Shenoy, Joseph Ngugi Kahiu, Hyunji Kim, D. Krishna Bhat, Ho Seong Lee
Publikováno v:
ACS Sustainable Chemistry & Engineering. 10:1367-1372
Autor:
Hyunji Kim, U. Sandhya Shenoy, Joseph Ngugi Kahiu, Samuel Kimani Kihoi, Ho Seong Lee, D. Krishna Bhat, Seonghoon Yi
Publikováno v:
Journal of Materials Science & Technology. 85:76-86
Tin telluride (SnTe) overwhelmingly continues to be studied owing to its promising thermoelectric properties, tunable electronic structure, and its potential as an alternate to toxic lead telluride (PbTe) based materials. In this research, we enginee
Autor:
Hyerin Jeong, Ho Seong Lee, Kyu Hyoung Lee, Samuel Kimani Kihoi, Joseph Ngugi Kahiu, Seonghoon Yi, Hyunji Kim, Juhee Ryu
Publikováno v:
Journal of the European Ceramic Society. 41:4175-4181
Nb1-xTixFe1.02Sb half-Heusler thermoelectric materials were synthesized trough arc melting and subsequent spark plasma sintering (SPS). Doping effect of Ti at Nb-site results in high power factor due to the optimization of hole carrier concentration.
Publikováno v:
Journal of Materials Chemistry C. 9:12374-12387
The inherently low figure of merit (ZT) is the main impediment to the commercialization of half-Heusler thermoelectric materials in energy applications. Herein, we demonstrate the effectiveness of substituting Bi on the Sb site in the promising Nb0.8
Autor:
Joseph Ngugi Kahiu, U. Sandhya Shenoy, Seonghoon Yi, Hyunji Kim, D. Krishna Bhat, Ho Seong Lee, Samuel Kimani Kihoi
Publikováno v:
Journal of Alloys and Compounds. 891:162033
Electronic structure is known to be highly influenced by the site occupancy and the stoichiometry of the material which in turn largely effects the thermoelectric properties. Herein, we present electronic calculations using density functional theory