Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Joseph M. Steigerwald"'
Autor:
Rahim Kasim, J. Palmer, A. Schmitz, I. Tsameret, F. Pan, C. Auth, Flavio Griggio, Yeoh Andrew W, Gerald S. Leatherman, Joseph M. Steigerwald, J. Hicks, J. Shin, A. Madhavan, N. Toledo
Publikováno v:
IRPS
This paper discusses the reliability of a new metallization scheme for 10nm back end of line (BEOL) local interconnect. Electromigration (EM) and time dependent dielectric breakdown (TDDB) on cobalt fill interconnects are investigated. Significant in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d63251175c58f96eca878418f6167f
https://doi.org/10.1109/irps.2018.8353641
https://doi.org/10.1109/irps.2018.8353641
Publikováno v:
Journal of Electronic Materials. 25:1593-1598
Chemical-mechanical polishing of copper in ammonia based solutions has been studied using electrochemical techniques such as electrochemical potential, linear polarization resistance, and potentiodynamic polarization. A copper rotating disk electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c40628d6d141d4beb1d8d7b3bc59c38
https://doi.org/10.1007/bf02655581
https://doi.org/10.1007/bf02655581
Autor:
Ronald J. Gutmann, S. Lakshminarayanan, David T. Price, Joseph M. Steigerwald, Lu You, Shyam P. Murarka, T. Paul Chow
Publikováno v:
Thin Solid Films. 270:472-479
Copper interconnect structures are being evaluated for 0.25 μm minimum feature size technology and below. This work focuses on fabrication of one- and two-level test structures with copper metallization and both oxide and polymer interlevel dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2730de5afc05a73cf6aa9fedbd353ae1
https://doi.org/10.1016/0040-6090(96)80080-0
https://doi.org/10.1016/0040-6090(96)80080-0
Autor:
Jan M. Neirynck, Lu You, David J. Duquette, Joseph M. Steigerwald, David T. Price, Ronald J. Gutmann, Shyam P. Murarka
Publikováno v:
Thin Solid Films. 270:596-600
Chemical-mechanical polishing (CMP) of copper with oxide interlevel dielectrics has been demonstrated as a viable patterning approach for copper interconnect structures. This paper summarizes our understanding of the mechanisms involved in copper CMP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebddecac773a660e12b75c8418ad8c39
https://doi.org/10.1016/0040-6090(95)06717-5
https://doi.org/10.1016/0040-6090(95)06717-5
Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films
Publikováno v:
Journal of The Electrochemical Society. 142:2379-2385
A description is given of the mixed electrochemical potential measured in situ during the chemical-mechanical polishing of copper. Potential measurements are indicative of the dissolution rate of copper and of the equilibrium form of the polished cop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc89d4a4968e89a090c240ad547ce1df
https://doi.org/10.1149/1.2044305
https://doi.org/10.1149/1.2044305
Publikováno v:
Journal of The Electrochemical Society. 141:3512-3516
Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a copper metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid copper interconnections. An inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7304c1fc9855fe0a59bfdebbb66591
https://doi.org/10.1149/1.2059362
https://doi.org/10.1149/1.2059362
Publikováno v:
Journal of The Electrochemical Society. 141:2842-2848
We describe an investigation into the pattern dependence of dishing and erosion during the chemical‐mechanical polishing of copper used for delineating inlaid metal patterns. Copper dishing is determined to be highly dependent on the width of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5035a0df7c24d2250afab9b274aa2108
https://doi.org/10.1149/1.2059241
https://doi.org/10.1149/1.2059241
Publikováno v:
MRS Bulletin. 18:46-51
Continuing advances in the fields of very-large-scale integration (VLSI), ultralarge-scale integration (ULSI), and gigascale integration (GSI), leading to the continuing development of smaller and smaller devices, have continually challenged the fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edbc34ad7343e013c50b20f20af3a00
https://doi.org/10.1557/s0883769400047321
https://doi.org/10.1557/s0883769400047321
Autor:
Joseph M. Steigerwald
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Chemical mechanical polishing (CMP) has traditionally been considered an enabling technology. CMP was first used in the early 1990s for BEOL metallization to replanarize the wafer substrate thus enabling advanced lithography which was becoming ever m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f7811f74ea8785b41ca152012aeeacb
https://doi.org/10.1109/iedm.2008.4796607
https://doi.org/10.1109/iedm.2008.4796607
Publikováno v:
Chemical Mechanical Planarization of Microelectronic Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713c73d094cb95ea2c78a300d77eaa9d
https://doi.org/10.1002/9783527617746.ch6
https://doi.org/10.1002/9783527617746.ch6
