Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Joseph M. Karasinski"'
Autor:
Lars-Ake Ragnarsson, Nestor A. Bojarczuk, Supratik Guha, Matthew Copel, Joseph M. Karasinski, Evgeni Gusev
Publikováno v:
Journal of Applied Physics. 93:3912-3919
We report on the physical and electrical properties of AlN as grown by reactive-atomic-beam deposition under various growth and anneal conditions. The physical characterization shows that AlN grown on hydrogen terminated (HF-last) Si has a thin layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cafc89b88c6339aaa569424db523ff
https://doi.org/10.1063/1.1555687
https://doi.org/10.1063/1.1555687
Autor:
Nestor A. Bojarczuk, D. Y. Ryu, D. J. Kim, Supratik Guha, Joseph M. Karasinski, S. H. Lee, J. H. Lee
Publikováno v:
Journal of Applied Physics. 88:2564-2569
A series of GaN:Mg structures were grown in molecular beam epitaxy, using either one or two rf nitrogen sources, and in metalorganic chemical vapor deposition systems with varying Mg flux. Acceptor energies were measured using the Hall effect and adm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4596a075a2b661bba86d2fde91f95e1
https://doi.org/10.1063/1.1286925
https://doi.org/10.1063/1.1286925
Publikováno v:
IEEE Electron Device Letters. 24:689-691
The Hall effect is used to measure the electron mobility in HfO/sub 2/ based n-channel field effect transistors with poly-Si gates. Large deviations between measured Hall and drift mobilities are explained by the presence of high concentrations of no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5dc37f8f61bdd67b5d5b7957a6c198
https://doi.org/10.1109/led.2003.818817
https://doi.org/10.1109/led.2003.818817
Autor:
Joseph M. Karasinski, K. Rim, Lars-Ake Ragnarsson, Eduard A. Cartier, Nestor A. Bojarczuk, Massimo V. Fischetti, Supratik Guha
Publikováno v:
IEEE Electron Device Letters. 22:490-492
High-effective mobilities are demonstrated in Al/sub 2/O/sub 3/ based n-channel MOSFETs with Al gates. The Al/sub 2/O/sub 3/ was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3267dc0929db6239c7e6e96cc7fbd9fc
https://doi.org/10.1109/55.954921
https://doi.org/10.1109/55.954921
Autor:
Joseph M. Karasinski, Lynne Gignac, Nestor A. Bojarczuk, John Bruley, Eduard A. Cartier, Supratik Guha
Publikováno v:
Journal of Applied Physics. 90:512-514
We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal–oxide–semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d93b0b689dcfdc792407984480278b
https://doi.org/10.1063/1.1373695
https://doi.org/10.1063/1.1373695
Autor:
Joseph M. Karasinski, Eduard A. Cartier, Matthew Copel, Lars-Ake Ragnarsson, Supratik Guha, Nestor A. Bojarczuk
Publikováno v:
Applied Physics Letters. 78:4169-4171
We report on high effective mobilities in yttrium-oxide-based n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e3ad4292ac348aae3f2534059adcc0
https://doi.org/10.1063/1.1381566
https://doi.org/10.1063/1.1381566
Publikováno v:
Applied Physics Letters. 76:1264-1266
We demonstrate that Si layers overgrown on GaN/sapphire substrate structures can be transferred onto host substrates by using the technique of laser-induced metallization of GaN at the GaN/sapphire interface via the reaction GaN=Ga+1/2N2. This may al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5956bae5f3892db85ffc339004eb2c59
https://doi.org/10.1063/1.126004
https://doi.org/10.1063/1.126004