Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Joseph M. Ballantyne"'
Publikováno v:
Journal of Electronic Materials. 26:1199-1204
GaInP has a direct bandgap for In concentrations higher than approximately 30%, and the band-lineup between GaInP and GaP is type-II for In concentrations less than 60%. Therefore, in order to use GaInP as the active light-emitting layer in an optoel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d5246a9532c0a8b39cca39e17f76ee
https://doi.org/10.1007/s11664-997-0020-0
https://doi.org/10.1007/s11664-997-0020-0
Publikováno v:
Journal of Crystal Growth. 172:53-57
Single crystals of GaP were grown on 4° miscut (100) Si substrates by selective area metalorganic chemical vapor deposition. Silicon nitride patterns were used to mask the wafer; no GaP nucleated on the silicon nitride patterns. The top and side wal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9e227de80fe58b397c4ce89a1f012c
https://doi.org/10.1016/s0022-0248(96)00738-5
https://doi.org/10.1016/s0022-0248(96)00738-5
Publikováno v:
Applied Physics Letters. 70:1192-1194
A method of providing asymmetric feedback in the triangular ring laser structure was devised through the simple alterations of the waveguide shape. Two kinds of alterations were designed and implemented, one being the “optical diode,” the other b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af5cfd2b649f40d1931337240282de19
https://doi.org/10.1063/1.118527
https://doi.org/10.1063/1.118527
Publikováno v:
Applied Physics Letters. 69:4236-4238
Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type‐I regions of ordered GaInP and type‐II regions of disord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46fab88657bca0809cb4cb70aeeea313
https://doi.org/10.1063/1.116956
https://doi.org/10.1063/1.116956
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
Summary form only given. We have grown approximately 20 /spl Aring/ thick InGaP pseudomorphic single quantum well ligh emitting structures of various In compositions on GaP substrate using flow-modulated OMVPE. The photoluminescence from quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e24f4c72f580968cbc8013e5af2f63b
https://doi.org/10.1109/leos.1996.571585
https://doi.org/10.1109/leos.1996.571585
Publikováno v:
International Technical Digest on Electron Devices.
Summary form only given. The traveling wave operation in triangular-shaped monolithic semiconductor ring ridge lasers is demonstrated, and their unique behavior and characteristics are described. A dry-etching process was used to fabricate triangular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c2e3044ee0d6e895669c1a64f79325
https://doi.org/10.1109/iedm.1990.237089
https://doi.org/10.1109/iedm.1990.237089
Publikováno v:
Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.
Not much progress has been made with optoelectronic devices on GaP and Si substrates owing to the lack of light emitting materials that can be epitaxially grown on these substrates with a low defect density. All currently available light emitting sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e256fbe1fb5f5b5194662099f9f462
https://doi.org/10.1109/leos.1997.645553
https://doi.org/10.1109/leos.1997.645553
Publikováno v:
Applied Physics Letters. 60:1658-1660
Triangular‐shaped ring ridge lasers (ridge trilasers) have been fabricated using quantum‐well semiconductor laser material. The spectra of these ridge trilasers show single‐wavelength operation above threshold confirming traveling‐wave behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b01528b902bd7efc343291fdf502514
https://doi.org/10.1063/1.107228
https://doi.org/10.1063/1.107228
Publikováno v:
Applied Physics Letters. 59:1395-1397
Total and partial reflection are demonstrated at the bends of V‐shaped lasers. By varying the angle of incidence to the facet at the bend, the reflectivity at this facet can be changed. Two totally and one partially reflecting V‐shaped lasers are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95913c748203a1186b038945fecab0e0
https://doi.org/10.1063/1.105317
https://doi.org/10.1063/1.105317
Publikováno v:
SPIE Proceedings.
Future Air Force RF links will require the speed, cost, reliability, weight, and EMI-immunity advantages of a monolithically integrated optical-electronic technology. GaAsN is a direct band-gap compound semiconductor material which potentially can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::657cf2f133bca9efde3e25c36d57368d
https://doi.org/10.1117/12.317662
https://doi.org/10.1117/12.317662