Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Joseph J. Kopanski"'
Publikováno v:
International Symposium for Testing and Failure Analysis.
In recent years, scanning probe microscopy (SPM) has drawn substantial attention for subsurface imaging, since the ultrasharp AFM tip (≈ 10 nm in radius) can deliver and detect, mechanical and electrical signals right above the material’s 3D volu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f529b8672d3012fac328339510f2cf
https://doi.org/10.31399/asm.cp.istfa2022p0426
https://doi.org/10.31399/asm.cp.istfa2022p0426
Publikováno v:
2021 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4585278ff689000eb7061a9618ebafb
https://doi.org/10.1109/icicdt51558.2021.9626514
https://doi.org/10.1109/icicdt51558.2021.9626514
Autor:
Kin P. Cheung, Jason T. Ryan, David Nminibapiel, Jason P. Campbell, Pragya R. Shrestha, Ji-Hong Kim, Joseph J. Kopanski
Publikováno v:
IEEE Transactions on Electron Devices. 63:3851-3856
We report a new technique for the rapid measurement of full capacitance-voltage ( $C$ – $V$ ) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b0913bca04ad8b2190e9f9c1b611f62
https://doi.org/10.1109/ted.2016.2598855
https://doi.org/10.1109/ted.2016.2598855
Publikováno v:
ECS Transactions. 72:131-138
Buried interfaces in electronics determine device properties. Characterization and control of these interfaces is the key to reliably manufacturing devices with high performance. We see an opportunity for electrical scanning probe microscope (eSPM) b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a804ed3d9b6396f14ea474ba9bacdca1
https://doi.org/10.1149/07202.0131ecst
https://doi.org/10.1149/07202.0131ecst
Publikováno v:
ECS Transactions. 69:79-88
This work develops a combined surface-activated bonding (SAB) technique for low-temperature SiO2-SiO2 and Cu-Cu bonding at 200 °C. The combined SAB technique involves combinations of surface activation by using surface bombardment by neutralized Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44d5ff6bb5531e9c717104559f7cdb5
https://doi.org/10.1149/06906.0079ecst
https://doi.org/10.1149/06906.0079ecst
Autor:
Ji-Hong, Kim, Pragya R, Shrestha, Jason P, Campbell, Jason T, Ryan, David, Nminibapiel, Joseph J, Kopanski, Kin P, Cheung
Publikováno v:
IEEE transactions on electron devices. 63(10)
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::249902b4d49a75744a397cb2541527f7
https://pubmed.ncbi.nlm.nih.gov/28579633
https://pubmed.ncbi.nlm.nih.gov/28579633
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N3113-N3117
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non-destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e93f68e4218c3b7da32787c56cae9b
https://doi.org/10.1149/2.0151501jss
https://doi.org/10.1149/2.0151501jss
Publikováno v:
ECS Transactions. 61:113-121
Three dimensional stacked integrated circuits (3D-ICs), achieved using through-silicon vias (TSV), is an enabler for the continued miniaturization, increased performance and functional diversification of microelectronic devices. However, their introd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa53f75af9b62960868f09a62655477
https://doi.org/10.1149/06106.0113ecst
https://doi.org/10.1149/06106.0113ecst
Publikováno v:
Journal of Applied Physics. 125:075706
Precise control of dopant placement is crucial for the reproducible, and reliable, nanoscale semiconductor device fabrication. In this paper, we demonstrate an atomic force microscopy (AFM) probe assisted localized doping of aluminum into an n-type s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14efca72001a8b630887ca1eeba90f4
https://doi.org/10.1063/1.5065385
https://doi.org/10.1063/1.5065385
Autor:
Joseph J. Kopanski, Joseph L. Tedesco, Madelaine Hernández-Mora, A.A. Herzing, Laurie Stephey, Christina A. Hacker, Nadine Gergel-Hackett, Curt A. Richter
Publikováno v:
ECS Transactions. 35:111-120
Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cccb4338dc74cf4df89e64144738fd92
https://doi.org/10.1149/1.3569904
https://doi.org/10.1149/1.3569904