Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Joseph J. Bendik"'
Autor:
Marc Schaekers, Joseph J. Bendik, P. Gopalan, Will Conley, F. Zhang, M. Op de Beeck, Mircea Dusa, Kurt G. Ronse, Hareen Gangala
Publikováno v:
Microelectronic Engineering. 46:51-54
In this paper, various contributions to the reflection variation at the resist/BARL interface are investigated. Not only deviations in the optical parameters (n, k, thickness T) of the BARL are causing variations in reflectivity, but also thickness v
Autor:
Joseph J. Bendik, Ivan Lalovic, Nigel R. Farrar, Mark D. Smith, Oleg Kritsun, Sarah N. McGowan
Publikováno v:
Photomask Technology 2008.
In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian f
Autor:
Chris Sallee, Ivan Lalovic, Joseph J. Bendik, Mark D. Smith, William B. Howard, Nigel R. Farrar
Publikováno v:
SPIE Proceedings.
The combined impact of longitudinal chromatic aberrations, focus-drilling, and Z-noise on several lithographic performance metrics is described. After review, we investigate an improved method for simulating the lithographic behavior of longitudinal
Autor:
Adlai H. Smith, Calvin Chen Chii Wean, Joseph J. Bendik, Yuji Yamaguchi, Venky Subramony, Ranjan Khurana
Publikováno v:
SPIE Proceedings.
The need for lithographic tool advances for reducing feature size, pitch (low k1 processing), and improving overlay stems directly from next generation circuit layout and performance roadmaps 1 . Overlay error or layer-to-layer misalignment tolerance
Publikováno v:
Optical Microlithography XVIII.
Modern lithographic simulation engines 1 are quite capable of determining the detrimental impact of source and lens aberrations on low k1 lithographic metrics - given the proper input 2 . Circuit designers, lithographic engineers, and manufacturing f
Autor:
Joseph J. Bendik, Fred L. Terry
Publikováno v:
SPIE Proceedings.
Specular-mode spectroscopic scatterometry is currently being used as an in-line metrology tool for wafer-to-wafer process monitoring and control in lithography and etch processes. Experimental real-time, in situ demonstrations of critical dimension m
Autor:
Joseph J. Bendik, Willard E. Conley
Publikováno v:
SPIE Proceedings.
The lithography prognosticator of the early 1980’s declared the end of optics for sub-0.5μm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into
Autor:
John S. Petersen, Joseph J. Bendik, Kim Dean, Will Conley, Paul Zimmerman, Jeff D. Byers, Daniel Miller
Publikováno v:
SPIE Proceedings.
The design of 157nm photoresist is a daunting task since air, water, and most organic compounds are opaque at this wavelength. Spectroscopic studies led to the observation that fluorinated hydrocarbons improve the transparency of 157nm resist materia
Publikováno v:
SPIE Proceedings.
Deep-UV lithography using 248 and 193-nm light will be the imaging technology of choice for the manufacturing of advanced memory and logic devices for the next decade. The extension of 248nm technology to 0.150 micrometers and beyond has been acceler
Autor:
Nigel R. Farrar, Christopher G. Rowan, Joseph J. Bendik, Chris A. Mack, Armen Kroyan, Olivier Semprez
Publikováno v:
SPIE Proceedings.
In many respects, excimer lasers are almost ideal light sources for optical lithography applications. Their narrow bandwidth and high power provide tow of the main characteristics required of a light source for high- resolution imaging. However, for