Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Joseph F. Aubuchon"'
Autor:
Joseph F. Aubuchon, Ping-Chuan Wang, C.-C. Yang, Paul F. Ma, Frieder H. Baumann, S. Y. Lee, Daniel C. Edelstein
Publikováno v:
Microelectronic Engineering. 106:214-218
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by both raising the deposition pressure and ado
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ee8f9b222f752913b387f289147372
https://doi.org/10.1016/j.mee.2013.01.001
https://doi.org/10.1016/j.mee.2013.01.001
Publikováno v:
ECS Transactions. 33:169-176
The deposition of TaN thin films were achieved using plasma enhanced atomic layer deposition (PEALD) technique. In this paper, we demonstrate the ability to adjust film properties such as film composition, density and resistivity with various plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2763ee4b5e5f74a33a908438b572fb5
https://doi.org/10.1149/1.3485253
https://doi.org/10.1149/1.3485253
Publikováno v:
Chemical Vapor Deposition. 12:370-374
Carbon nanotubes (CNTs) have been grown aligned with the directions of electric fields in a DC plasma-enhanced (DC PE) CVD process. The CNTs can be grown at various predefined angles with respect to the substrate. It is shown that the local electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964efa33f501e8eddfdad585f9959e8d
https://doi.org/10.1002/cvde.200506444
https://doi.org/10.1002/cvde.200506444
Publikováno v:
Nano Letters. 6:324-328
A novel multi-branching carbon nanotube (CNT) structure is synthesized by direct current plasma enhanced chemical vapor deposition. The structure consists of aligned CNTs which have branches of smaller diameters growing aligned along a direction perp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b5686097a699e3610e87bde0d1e1cf
https://doi.org/10.1021/nl052037t
https://doi.org/10.1021/nl052037t
Publikováno v:
The Journal of Physical Chemistry B. 109:24215-24219
Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::814c0b7c7d604aa2a2f39043a9ff000b
https://doi.org/10.1021/jp0558627
https://doi.org/10.1021/jp0558627
Autor:
Soo-Hwan Jeong, I. C. Chen, Li-Han Chen, Sungho Jin, In K. Yoo, Dong-Wook Kim, Joseph F. Aubuchon
Publikováno v:
Carbon. 43:835-840
We investigated the growth behavior and morphology of vertically aligned carbon nanotubes (CNTs) on silicon (Si) substrates by direct current (DC) plasma enhanced chemical vapor deposition (PECVD). We found that plasma etching and precipitation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d636e53400ad32e02804d838e3ec50
https://doi.org/10.1016/j.carbon.2004.11.018
https://doi.org/10.1016/j.carbon.2004.11.018
Publikováno v:
Nano Letters. 4:1915-1918
We report a new phenomenon of dynamic nanofragmentation of DC plasma grown carbon nanotubes under high-strain-rate conditions. An impacting sphere on vertically aligned multiwall nanotubes caused them to break up into short segments in just 15 micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41fd366ea7b7b7d7d31cf51634bc2836
https://doi.org/10.1021/nl048946k
https://doi.org/10.1021/nl048946k
Publikováno v:
Nano Letters. 4:1781-1784
Carbon nanotubes have been grown with a sharply defined zigzag structure by introducing changes in the direction of applied electric field during dc plasma enhanced chemical vapor deposition (PECVD). The nanotubes maintain the same diameter before an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f935c6f4489648694fb602c272ef2bb
https://doi.org/10.1021/nl049121d
https://doi.org/10.1021/nl049121d
Autor:
C.-C. Yang, Hosadurga Shobha, Joseph F. Aubuchon, Weifeng Ye, Daniel C. Edelstein, Son Nguyen, M. Shek, Baozhen Li, Alfred Grill
Publikováno v:
IEEE Electron Device Letters. 33:588-590
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition. Both in situ and ex situ Co/SiC(N,H) capping processes were evaluated and have shown comparable parametrics to the control reference. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f71e537b0c0734640f95b83f7ce3518
https://doi.org/10.1109/led.2012.2183850
https://doi.org/10.1109/led.2012.2183850
Autor:
Hosadurga Shobha, S. Guggilla, J. Ren, Chenming Hu, C. Parks, Hoosung Kim, Frieder H. Baumann, C.-C. Yang, Son Nguyen, D. Sabens, Jain-Hsing Lee, Tibor Bolom, Takeshi Nogami, Joseph F. Aubuchon, Andrew H. Simon, C. Niu, Joyeeta Nag
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Alternate metallization schemes for copper interconnect using selective CVD Co capping at the 22nm technology node are investigated. Control splits fabricated with PVD Ta(N) barrier/liner layers and CuMn alloy seedlayers are compared against intercon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c29d2b29a6ac7ef1559c89bdd8af174
https://doi.org/10.1109/irps.2013.6532002
https://doi.org/10.1109/irps.2013.6532002