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pro vyhledávání: '"Joseph Averion-Puttrich"'
Autor:
Bo Hsu, Sidra Farid, Michael A. Stroscio, Mitra Dutta, Anirudha V. Sumant, Joseph Averion-Puttrich
Publikováno v:
Nanotechnology. 32:135205
We report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ∼200 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b79a2a616c82d6efffc4d1da02daec5
https://doi.org/10.1088/1361-6528/abd0b6
https://doi.org/10.1088/1361-6528/abd0b6
