Výsledky vyhledávání - "Joseph A. Levert"

Measurement of Polishing Rate as a Function of Pad Independent Abrasive Friction for Chemical Mechanical Polishing

Autor: Christopher McGowan, Joseph A Levert

Optimization of Chemical Mechanical Planarization (CMP) on integrated circuits requires an accurate model of material removal. The current model of polishing is two-body abrasion of particles trapped at the pad asperity-substrate junction, however, t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9e70de3aac105c4e333fa0683509d4c
https://ecsarxiv.org/938zb

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CMP Friction as a Function of Slurry Silica Nanoparticle Concentration and Diameter

Autor: Chad S. Korach, Joseph A. Levert

Publikováno v: Tribology Transactions. 52:256-261

Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with low shear strengths and at the same time still require processing with chemical mechanical polishing (CMP). CMP polishes the substrate material (e.g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67bee8a7c6f874492a90a33513dc19f4
https://doi.org/10.1080/10402000802593130

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NYSID's project CREATE: An organizational model for service learning through assistive technology development

Autor: Joseph A. Levert, Andy Grosso

Publikováno v: Proceedings of the 2014 Zone 1 Conference of the American Society for Engineering Education.

Project CREATE (Cultivating Resources for Employment with Assistive Technology) is an organization established by NYSID (New York State Industries for the Disabled, Inc.) in collaboration with member agencies such as Goodwill Industries of Greater Ne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ead247f4571a2be2411bf404ce2a443d
https://doi.org/10.1109/aseezone1.2014.6820661

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Mechanism for Subambient Interfacial Pressures While Polishing With Liquids

Autor: Steven Danyluk, John A. Tichy, Joseph A. Levert

Publikováno v: Journal of Tribology. 122:450-457

This paper reports the results of a model for predicting the development of subambient pressures during the polishing of flat hard substrates by sliding against a compliant pad in the presence of a slurry (liquid). This work is an extension of our pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::861e1e0704ea0e58c706955b94570443
https://doi.org/10.1115/1.555381

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Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing

Autor: Steven Danyluk, Lei Shan, Lorne Meade, Joseph A. Levert, John A. Tichy

Publikováno v: Journal of Tribology. 122:539-543

This paper reports on the measurement of fluid (water) pressure distribution at a soft (polyurethane) pad/steel interface. The distribution of the interfacial fluid pressure has been measured with a specially-designed fixture over the typical range o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1d4d73c3038cd8b9ae9d65797a85767
https://doi.org/10.1115/1.555398

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Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing

Autor: Joseph A. Levert, John A. Tichy, Steven Danyluk, Lei Shan

Publikováno v: Journal of The Electrochemical Society. 146:1523-1528

A preliminary model for the contact mechanics and fluid mechanics of the chemical mechanical polishing process is presented. Only the basic equations of elastic contact surface mechanics and hydrodynamic lubrication are required. Although the model i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::523c633d103129442545981458849683
https://doi.org/10.1149/1.1391798

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Vertical differential displacements at a pad/sapphire interface during polishing

Autor: Joseph A. Levert, F. Mess, Steven Danyluk

Publikováno v: Wear. 211:311-315

This paper describes the results of measurements of the vertical displacement between a polishing pad and a sapphire disk surface. Those experiments were intended to simulate silicon/pad interaction as it occurs in the chemical-mechanical polishing o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f17f2fd166a5aff7df8a2c61e699ab9
https://doi.org/10.1016/s0043-1648(97)00113-0

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The Variation of CMP Pad Asperity Friction as a Function of Speed and Normal Load

Autor: Joseph A. Levert, Chad S. Korach, Edward Peters, David C. Haas, Nicholas Lakomcik

Publikováno v: STLE/ASME 2008 International Joint Tribology Conference.

CMP (chemical mechanical polishing) is a vital IC (integrated circuit) manufacturing process. CMP is performed by rubbing the IC surface with a roughened polyurethane polishing pad in the presence of a chemically active, abrasive containing slurry. F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c70778ad1ad654e062cce88f4b289a8
https://doi.org/10.1115/ijtc2008-71217

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Chemical Mechanical Polishing Friction Measurements With Silica Atomic Force Microscope Tips

Autor: Yangro Lee, Joseph A. Levert, Joo Hoon Choi, Chad S. Korach, Louis E. DeMarco, Richard T. Leveille

Publikováno v: ASME/STLE 2007 International Joint Tribology Conference, Parts A and B.

The feature sizes on Integrated Circuits (ICs) continue to decrease to provide higher device densities and smaller chip designs. To accomplish this, current fabrication and processing technology must be advanced to achieve these goals. In particular,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7ec4a660b89754b14f07654fc770738
https://doi.org/10.1115/ijtc2007-44383

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