Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Joseph A. Felker"'
Autor:
James Alexander Liddle, Warren K. Waskiewicz, Reginald C. Farrow, C. Biddick, J. S. Kraus, Nace Layadi, P. A. Orphanos, Isik C. Kizilyalli, Gregg M. Gallatin, Avinoam Kornblit, Joseph A. Felker, F. Klemens, Myrtle I. Blakey, Masis Mkrtchyan, Sailesh Mansinh Merchant
Publikováno v:
Microelectronic Engineering. 53:309-312
A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb2a6ffc7f8deec16d957163b27dae5
https://doi.org/10.1016/s0167-9317(00)00321-x
https://doi.org/10.1016/s0167-9317(00)00321-x
Autor:
Reginald C. Farrow, Joseph A. Felker, Myrtle I. Blakey, Masis Mkrtchyan, Gregg M. Gallatin, Avinoam Kornblit, Milton L. Peabody, Anthony E. Novembre, Richard J. Kasica, P. A. Orphanos, Isik C. Kizilyalli, J. S. Kraus, C. Biddick, Leonidas E. Ocola, F. Klemens, Warren K. Waskiewicz
Publikováno v:
Microelectronic Engineering. 46:263-266
SCALPEL alignment marks have been fabricated in a SiO 2 /WSi 2 structure using SCALPEL lithography and plasma processing. The positions of the marks were detected through e-beam resist in the SCALPEL proof of lithography (SPOL) tool by scanning the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8328244ee8d4005da205219d9fc725ca
https://doi.org/10.1016/s0167-9317(99)00077-5
https://doi.org/10.1016/s0167-9317(99)00077-5
Autor:
Warren K. Waskiewicz, Stuart T. Stanton, Joseph A. Felker, James Alexander Liddle, Lloyd R. Harriott
Publikováno v:
SPIE Proceedings.
Successful deployment of SCALPEL for several post-optical production lithography generations requires a unique optimum writing-strategy. Since the electron optics sub-field and the strutted mask patten segment are both smaller than the final device i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd22a923f3ae7df5ffcb447c3a308ede
https://doi.org/10.1117/12.351091
https://doi.org/10.1117/12.351091
Autor:
Joseph A. Felker, J. S. Kraus, Sailesh Mansinh Merchant, P. A. Orphanos, Isik C. Kizilyalli, F. Klemens, Leonidas E. Ocola, C. Biddick, Myrtle I. Blakey, Masis Mkrtchyan, Avi Kornblit, Warren K. Waskiewicz, Nace Layadi, James Alexander Liddle, Gregg M. Gallatin, Reginald C. Farrow
Publikováno v:
SPIE Proceedings.
A manufacturable process for fabricating alignment marks that are compatible the SCALPEL lithography system is described. The marks were fabricated in a SiO 2 /WSi 2 structure using SCALPEL lithography and plasma processing. The positions of the mark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb7d658cc649e0c49382477fafe3101
https://doi.org/10.1117/12.351093
https://doi.org/10.1117/12.351093
Autor:
W. F. Connelly, James Alexander Liddle, Warren K. Waskiewicz, Anthony E. Novembre, Harry H. Wade, Chester S. Knurek, L. Rutberg, R. DeMarco, C. Biddick, J. P. Custy, A. H. Crorken, J. S. Kraus, Joseph A. Felker, Pat G. Watson, K. S. Werder, H. A. Huggins, Stephen W. Bowler, Lloyd R. Harriott, Milton L. Peabody, Richard J. Kasica, R. R. Freeman, K. Brady, Steven D. Berger, Regine G. Tarascon-Auriol, Myrtle I. Blakey, Masis Mkrtchyan, L. Fetter, Reginald C. Farrow, R. M. Camarda, David Lee Windt, L. C. Hopkins
Publikováno v:
SPIE Proceedings.
We have designed, constructed, and are now performing experiments with a proof-of-concept projection electron-beam lithography system based upon the SCALPELR (scattering with angular limitation projection electron-beam lithography) principle. This in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d93d805409ef28706da473d83f37ee
https://doi.org/10.1117/12.275786
https://doi.org/10.1117/12.275786
Autor:
Steven D. Berger, Christopher J. Biddick, Myrtle I. Blakey, Kevin J. Bolan, Stephen W. Bowler, Kevin J. Brady, Ron M. Camarda, Wayne F. Connelly, Reginald C. Farrow, Joseph A. Felker, Linus A. Fetter, Lloyd R. Harriott, Harold A. Huggins, Joseph S. Kraus, James A. Liddle, Masis M. Mkrtchyan, Anthony E. Novembre, Milton L. Peabody, Jr., Thomas M. Russell, Wayne M. Simpson, Regine G. Tarascon-Auriol, Harry H. Wade, Warren K. Waskiewicz, Pat G. Watson
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8aebe664076717f97db2e7bf3f022b7
https://doi.org/10.1117/12.195843
https://doi.org/10.1117/12.195843
Autor:
Joseph A. Felker, W. K. Waskiewicz, P. A. Orphanos, Stuart T. Stanton, Anthony E. Novembre, James Alexander Liddle, Myrtle I. Blakey, Masis Mkrtchyan, C. Biddick, J. S. Kraus, Reginald C. Farrow, Gregg M. Gallatin
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2560
We present an approach to real time direct aerial image monitoring which utilizes the information contained in an alignment signal generated by scanning the image of a mask grating over a corresponding wafer grating and detecting the backscatter elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c97a7b680a50ff14c5ccc17b30e9db6
https://doi.org/10.1116/1.1289544
https://doi.org/10.1116/1.1289544
Autor:
M. Mkrtychan, L. C. Hopkins, Harry H. Wade, K. Brady, Steven D. Berger, A. H. Crorken, Myrtle I. Blakey, J. P. Custy, Joseph A. Felker, G. P. Watson, C. Biddick, W. F. Connelly, Reginald C. Farrow, Anthony E. Novembre, Milton L. Peabody, R. M. Camarda, K. S. Werder, R. Dimarco, David Lee Windt, R. G. Tarascon, Chester S. Knurek, H. A. Huggins, R. R. Freeman, J. S. Kraus, Stephen W. Bowler, L. Fetter, James Alexander Liddle, L. R. Harriott, W. K. Waskiewicz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3825
We have designed and constructed a proof‐of‐concept projection electron beam lithography system based on the scattering with angular limitation projection electron beam lithography principle. In this system, a thin membrane mask is used in a 4:1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a293e3ead054d16983d360bdc0b6da
https://doi.org/10.1116/1.588675
https://doi.org/10.1116/1.588675
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Conference
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