Zobrazeno 1 - 10
of 309
pro vyhledávání: '"Josef Stein"'
Autor:
v. Below, G.
Publikováno v:
Vierteljahrschrift für Sozial- und Wirtschaftsgeschichte, 1928 Jan 01. 20(1/2), 263-265.
Externí odkaz:
https://www.jstor.org/stable/20725490
Autor:
Asen, Johannes
Publikováno v:
Annalen des Historischen Vereins für den Niederrhein; December 1928, Vol. 112 Issue: 1 p170-172, 3p
Autor:
Johannes Asen
Publikováno v:
Annalen des Historischen Vereins für den Niederrhein. 112:170-172
Publikováno v:
ATZ worldwide eMagazine. 113:20-25
Publikováno v:
ATZ - Automobiltechnische Zeitschrift. 113:552-557
Die Vielfalt der Anforderungen an die Antriebskomponenten stellt die Entwickler in der Einstiegsphase alternativer Antriebstechnik vor grosse Herausforderungen, insbesondere vor dem Hintergrund eines ungewissen Einstiegsszenarios hinsichtlich Zeitpun
Autor:
Thomas Müller, Horst Przuntek, Kerstin Hellwig, Thorsten Schulte, Birgit Voss, Franz Josef Stein
Publikováno v:
CNS Drugs. 18:105-111
Objective: In some countries, such as Germany, there has been a move towards the treatment of patients with Parkinson’s disease in specialised inpatient units. However, data on patient outcome and the daily costs of antiparkinsonian drugs in these
Publikováno v:
Journal of Applied Physics. 79:2529-2534
Metal‐oxide‐semiconductor capacitors fabricated by dry and wet oxidation at 1150 °C of n‐type 6H–SiC exhibit a drastic negative charging during Fowler–Nordheim charge injection. This charging strongly depends on the fabrication conditions
Autor:
Josef Stein
Publikováno v:
Journal of Quantitative Spectroscopy and Radiative Transfer. 54:395-399
The problem of line-shifts in LTE plasmas is addressed in this study, in the framework of static ions and “active spectator” model. Although the work is still in progress, we can show that line-shifts, as predicted by Skupsky, are correct at high
Autor:
Geoffrey C. Fox, Josef Stein
Publikováno v:
Concurrency: Practice and Experience. 5:659-674
We have used six static parallelization tools on four Fortran-77 programs used in physics simulations. We indicate areas where current tools have difficulties in recognizing parallelism, and illustrate these issues with simple examples. We suggest th
Publikováno v:
Thin Solid Films. 364:95-97
We present a comparison of SHG-measurements at the Si/SiO2-interface with electrical characterization to demonstrate the ability of non-linear optical methods for the analysis of interfaces. The Si/SiO2-interfaces under investigation are deposited ox