Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Josef Mathuni"'
Autor:
Martin Bednarzik, Josef Mathuni, Gisela Ahrens, Bernd Loechel, Rainer Engelke, Gabi Gruetzner, Daniel Schondelmaier
Publikováno v:
Microsystem Technologies. 14:1607-1612
First promising investigations of SU-8 removal experiments with a novel plasma etching technique are presented. The basic idea of this technique is to separate the highly effective generation of chemical radicals (e.g. oxygen radicals) using a travel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c60399334d826dc58df1a2278c59a55
https://doi.org/10.1007/s00542-007-0537-4
https://doi.org/10.1007/s00542-007-0537-4
Autor:
Florian Letzkus, Mathias Irmscher, B. Panzer, Reinhard Springer, Jörg Butschke, Hans Loschner, M. Mohaupt, S. Eder, R. Eberhardt, Thomas Struck, Christian Reuter, Josef Mathuni, Albrecht Ehrmann
Publikováno v:
Microelectronic Engineering. :213-218
The 4×Ion Projection Lithography (IPL), which is designed to reach sub 70-nm feature sizes is a promising technology for the Next Generation Lithography (NGL). An important feature of IPL is the ‘pattern lock’ system allowing on-line control of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c51d0ee83fce38c71e6fba3005b25cd
https://doi.org/10.1016/s0167-9317(01)00518-4
https://doi.org/10.1016/s0167-9317(01)00518-4
Autor:
Reinhard Springer, Mathias Irmscher, Christian Reuter, Jörg Butschke, Florian Letzkus, B. Höfflinger, Josef Mathuni, Albrecht Ehrmann
Publikováno v:
Microelectronic Engineering. 53:609-612
The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28eb2f29d02a845319e1524bda85243
https://doi.org/10.1016/s0167-9317(00)00388-9
https://doi.org/10.1016/s0167-9317(00)00388-9
Autor:
Corinna Koepernik, Christian Holfeld, Florian Letzkus, Joerg Butschke, Josef Mathuni, Frank Sobel, Lutz Aschke
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) is the favourite next generation lithography candidate for IC device manufacturing with feature sizes beyond 32nm. The SiO2 buffer dry etching is a crucial step in the manufacture of the EUV mask due to stringen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8067b3ff4fc2f887fade59aedb18930
https://doi.org/10.1117/12.569265
https://doi.org/10.1117/12.569265
Autor:
Josef Mathuni, Joerg Butschke, Jenspeter Rau, Florian Letzkus, Frank-Michael Kamm, C. Koepernik, Ch. Holfeld, Guenther Ruhl
Publikováno v:
SPIE Proceedings.
Currently, EUV lithography targets for sub-50 nm features. These very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a99017f9e6f58174f6819a49a6872bb
https://doi.org/10.1117/12.568010
https://doi.org/10.1117/12.568010
Autor:
Reinhard Springer, Frank-Michael Kamm, Guenther Ruhl, Josef Mathuni, Dirk Knobloch, Jenspeter Rau, Florian Letzkus
Publikováno v:
SPIE Proceedings.
EUV mask technology poses many new challenges on mask manufacturing processes. One crucial manufacturing step is the patterning of the EUV absorber. Although in the first concepts a Chromium film is used as absorber, increasing demands for shrinking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff1ad18aaeccad4e2360f92b0739b35
https://doi.org/10.1117/12.504243
https://doi.org/10.1117/12.504243
Autor:
Frank Scholze, Johannes Tummler, Albrecht Ehrmann, Frank-Michael Kamm, Andreas Wolter, Gerhard Ulm, Jenspeter Rau, Josef Mathuni
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
CD metrology requirements have increased dramatically within the last years. For the coming technology generations, it is not clear which CD measurement method will be standard for mask manufacturing. An interesting approach is to use the diffracted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d34fc8d00c5b364c7c79475eadac07
https://doi.org/10.1117/12.514961
https://doi.org/10.1117/12.514961
Autor:
Christoph Stepper, Albrecht Ehrmann, Josef Mathuni, Frank-Michael Kamm, Hermann Wendt, Jenspeter Rau
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is one of the most promising technologies for wafer feature sizes of below 50nm. The illumination wavelength will be approximately 13.5nm and consequently no transmissive optics can be used for this soft X-ray l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9bf2f20ada38c2d533b01e3146ff166
https://doi.org/10.1117/12.479358
https://doi.org/10.1117/12.479358
Publikováno v:
SPIE Proceedings.
CD uniformity and CD mean to target specifications nowadays can only be accomplished by mask manufacturing process using chrome dry etch. Chrome plasma etch processes tend to show a strong dependency of the chrome etch rate and thus the etch bias on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2434b3684783c71a0cec3422156bc61e
https://doi.org/10.1117/12.438358
https://doi.org/10.1117/12.438358
Autor:
Christoph M. Friedrich, Josef Mathuni, Steffen List, Guenther Ruhl, Ronald L. Gordon, Uwe Griesinger, Andreas Erdmann, Christian K. Kalus, Leonhard Mader, Rainer Pforr, Wilhelm Maurer
Publikováno v:
SPIE Proceedings.
This paper describes mask topography effects of alternating phase shift masks for DUV lithography. First two options to achieve intensity balancing are discussed. Global phase errors of +/- 10 degrees cause a CD change of 3 nm and 8 nm CD placement e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf01b04421b44459770374d752647dc
https://doi.org/10.1117/12.388969
https://doi.org/10.1117/12.388969