Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Josef Bock"'
Autor:
Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquiere, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Disch, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 288-298 (2021)
This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special adv
Externí odkaz:
https://doaj.org/article/3bc0679a9ae0498f94cba80626998dd3
Autor:
Marc Margalef-Rovira, Haitham Ghanem, Fred Buchali, Holger Rucker, Pascal Chevalier, Rolf Schmid, Marina Deng, Tim Maiwald, Christophe Gaquiere, A. Mukherjee, Horst Hettrich, Thomas Zimmer, Josef Bock, Paulius Sakalas, Karsten Schuh, Karina Schneider, Michael Moller, Sebastien Fregonese, Wolfgang Templ, Bjorn Debaillie, Michael Collisi, Philippe Ferrari, Alper Karakuzulu, Caroline Maye, Akshay Visweswaran, Thomas Zwick
Publikováno v:
Journal of Microwaves
IEEE Journal of Microwaves
IEEE Journal of Microwaves, 2021, 1 (1), pp.288-298. ⟨10.1109/jmw.2020.3031831⟩
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 288-298 (2021)
IEEE Journal of Microwaves
IEEE Journal of Microwaves, 2021, 1 (1), pp.288-298. ⟨10.1109/jmw.2020.3031831⟩
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 288-298 (2021)
International audience; This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented
Autor:
Bernd Heinemann, Josef Bock, Pascal Chevalier, Ed Preisler, A. Mukherjee, Sorin P. Voinigescu, Michael Schroter, Tommy Rosenbaum
Publikováno v:
Proceedings of the IEEE. 105:1068-1086
A technology roadmap for the electrical performance of high-speed silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) si
Autor:
Thomas Jacquet, Cristell Maneux, Thomas Zimmer, Klaus Aufinger, Anjan Chakravorty, Josef Bock, Chhandak Mukherjee
Publikováno v:
IEEE Transactions on Electron Devices. 63:3657-3662
In part I, we extensively analyzed the results of the low-frequency noise characterization in advanced SiGe:C heterojunction bipolar transistors. In this paper, we demonstrate that base and collector noise spectral densities are partially correlated.
Autor:
Chhandak Mukherjee, Thomas Jacquet, Josef Bock, Thomas Zimmer, Anjan Chakravorty, Cristell Maneux, Klaus Aufinger
Publikováno v:
IEEE Transactions on Electron Devices. 63:3649-3656
In this paper, we present extensive characterization of low-frequency noise in advanced silicon germanium heterojunction bipolar transistors. We demonstrate the extraction methodology of base and collector noise spectral densities for a wide range of
Autor:
G. Avenier, Wolfgang Liebl, Bernd Heinemann, Dirk Manger, Josef Bock, Holger Rücker, Alexis Gauthier, Pascal Chevalier
Publikováno v:
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
BCICTS
BCICTS
This paper reviews the advantages of SiGe BiCMOS technologies and their applications in the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs and the CMOS nodes is shown. Future perspectives and related main cha
Autor:
Niccolò Rinaldi, Andreas Pawlak, Cristell Maneux, Vincenzo d'Alessandro, Bernd Heinemann, Thomas Zimmer, Rickard Lovblom, Olivier Ostinelli, Colombo R. Bolognesi, Maria Alexandrova, Pascal Chevalier, Ralf Flickiger, Christoph Jungemann, Josef Bock, Holger Rucker, G. Wedel, Sebastien Fregonese, Michael Schroter
Publikováno v:
Proceedings of the IEEE
Proceedings of the IEEE, Institute of Electrical and Electronics Engineers, 2017, 105 (6), pp.1035-1050. ⟨10.1109/JPROC.2017.2669087⟩
Proceedings of the IEEE, Institute of Electrical and Electronics Engineers, 2017, 105 (6), pp.1035-1050. ⟨10.1109/JPROC.2017.2669087⟩
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd71cb6864d7a450738e2a7c7cc9024f
http://hdl.handle.net/11588/648563
http://hdl.handle.net/11588/648563
Autor:
Klaus Haferkamp, Franz-Josef Bock
Publikováno v:
Chemie Ingenieur Technik. 87:95-102
This paper proposes a new method, risk-oriented hazard analysis (ROGA), for carrying out the risk-based hazard analysis of chemical plants. The aim of ROGA method is to determine the status of a plant's safety technology by determining the risk that
Autor:
Franz-Josef Bock, Klaus Haferkamp
Publikováno v:
Chemie Ingenieur Technik. 87:103-110
In the first part of this article, the deductive hazard analysis and its extension by a semi-quantitative risk assessment of sources of hazards were presented. This was done by using a calibrated risk graph. In this second part now, the semi-quantita
Autor:
Bernd Heinemann, Dirk Manger, Klaus Aufinger, Josef Bock, C. Wipf, Thomas Meister, Holger Rücker, Steffen Marschmeyer, Sabine Boguth, Rudolf Lachner, Herbert Knapp, Andreas Pribil, R. Barth, Jonas Wursthorn, G. G. Fischer, A. Fox, Wolfgang Liebl
Publikováno v:
IEEE Electron Device Letters. 36:642-644
The high-frequency performance of a novel SiGe heterojunction bipolar transistor (HBT) module with monocrystalline base link is investigated in an industrial 0.13- $\mu \text{m}$ BiCMOS environment. The main feature of this new HBT module is a signif