Zobrazeno 1 - 10
of 256
pro vyhledávání: '"Jose Rebollo"'
Autor:
Rosario García-Vicuña, Xavier Juanola, Victoria Navarro-Compán, Manuel José Moreno-Ramos, Concepción Castillo-Gallego, Mireia Moreno, Eva Galíndez, María Montoro, Ismael Gómez, Francisco Jose Rebollo-Laserna, Estíbaliz Loza
Publikováno v:
Rheumatology and Therapy, Vol 10, Iss 5, Pp 1215-1240 (2023)
Abstract Introduction The management of specific clinical scenarios is not adequately addressed in national and international guidelines for axial spondyloarthritis (axSpA). Expert opinions could serve as a valuable complement to these documents. Met
Externí odkaz:
https://doaj.org/article/0b7e5261eb4d4ea39c89fd43b83d2982
Autor:
Jorge Sanchez-Torrijos, Cesar Queral, Carlos Paris, Maria Jose Rebollo, Miguel Sanchez-Perea, Jose Maria Posada
Publikováno v:
Nuclear Engineering and Technology, Vol 54, Iss 12, Pp 4601-4619 (2022)
The classical Probabilistic Safety Analysis (PSA) does not include any time dependence explicitly. However, the success criteria (SC) could evolve during the cycle for some initiating events. In that sense, there is a type of sequence in which this t
Externí odkaz:
https://doaj.org/article/85788def41c34d19b804ad7c2b2b2237
Autor:
Ana Martín-Santiago, MD, Susana Puig, MD PhD, Daniel Arumi, MD PhD, Francisco Jose Rebollo Laserna, MD
Publikováno v:
Current Therapeutic Research, Vol 96, Iss , Pp 100679- (2022)
ABSTRACT: Objective: Evaluate the safety profile and tolerability of topical phosphodiesterase 4 (PDE4) inhibitors versus vehicle as treatment for atopic dermatitis in published studies. Methods: A search was performed in Medline/PubMed, Web of Scien
Externí odkaz:
https://doaj.org/article/c1f70b21120743c3a995cfe90298da6e
Autor:
Maria Cabello, Victor Soler, Xavier Jordà, Philippe Godignon, Josep Montserrat, Maria R. Rogina, Jose Rebollo, Andrei Mihaila, Viorel Banu
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:4320-4329
This work aims to the analysis of high-voltage (HV) SiC MOSFETs’ reliability and robustness. Large-area (up to 25 mm2) devices rated for 1.7-, 3.3-, and 4.5-kV applications were fabricated with a special process for gate oxide formation aimed to im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5493a066011755e54732646a5defda
https://doi.org/10.1109/jestpe.2020.3028159
https://doi.org/10.1109/jestpe.2020.3028159
Autor:
María Jose Rebollo-Lopez, Joël Lelièvre, Daniel Alvarez-Gomez, Julia Castro-Pichel, Francisco Martínez-Jiménez, George Papadatos, Vinod Kumar, Gonzalo Colmenarejo, Grace Mugumbate, Mark Hurle, Vanessa Barroso, Rob J Young, María Martinez-Hoyos, Rubén González del Río, Robert H Bates, Eva Maria Lopez-Roman, Alfonso Mendoza-Losana, James R Brown, Emilio Alvarez-Ruiz, Marc A Marti-Renom, John P Overington, Nicholas Cammack, Lluís Ballell, David Barros-Aguire
Publikováno v:
PLoS ONE, Vol 10, Iss 12, p e0142293 (2015)
As a follow up to the antimycobacterial screening exercise and the release of GSK´s first Tres Cantos Antimycobacterial Set (TCAMS-TB), this paper presents the results of a second antitubercular screening effort of two hundred and fifty thousand com
Externí odkaz:
https://doaj.org/article/8e46eddd23e54015ab4639bb3308df5d
Autor:
Victor Soler, Josep Montserrat, Jose Rebollo, Daniel Haasmann, Philippe Godignon, Maria Cabello
Publikováno v:
Materials Science Forum. 963:473-478
In this work, we have evaluated 4° off-axis Si face 4H-SiC MOSFETs channel performance along both the [11-20] (perpendicular to steps) and [1-100] (parallel to steps) orientations, to evidence possible anisotropy on Si-face due to roughness scatteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd67e2d0a73b72a9b1b3f589b42cac0
https://doi.org/10.4028/www.scientific.net/msf.963.473
https://doi.org/10.4028/www.scientific.net/msf.963.473
Autor:
Enea Bianda, Philippe Godignon, Andrei Mihaila, Victor Soler, Lukas Kranz, Jose Rebollo, Maria Cabello, Josep Montserrat, Lars Knoll, Viorel Banu
Publikováno v:
Materials Science Forum. 963:768-772
This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm2) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf90677959d9c75f23f52c9d20fff1c
https://doi.org/10.4028/www.scientific.net/msf.963.768
https://doi.org/10.4028/www.scientific.net/msf.963.768
Autor:
David Sánchez, Sergio Llorente, Xavier Jordà, Xavier Perpiñà, Miquel Vellvehi, Jose Rebollo, Manuel Hernández Fernández, Tomas Cabeza
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:1832-1841
This paper focuses on providing an improved and efficient alternative to electromechanical relays (EMRs) in view of the growing demand characteristics for an effective power multiplexing in induction heating applications. A major analytical approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71378747891cdbd6376d57db5dd97882
https://doi.org/10.1109/tie.2018.2838093
https://doi.org/10.1109/tie.2018.2838093
Autor:
Manuel Estrada-Lorenzo, Jose, Medino-Munoz, Juan, Jose Rebollo-Rodriguez, Maria, Concepcion Campos, Primo-Pena, Elena
Publikováno v:
Web of Science
Repisalud
Instituto de Salud Carlos III (ISCIII)
Repisalud
Instituto de Salud Carlos III (ISCIII)
[ES] El impacto y la universalidad de la pandemia de SARS-CoV-2 han provocado en el mundo entero la necesidad de disponer de información científica de una forma rápida y accesible para la correcta toma de decisiones entre los profesionales sanitar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::313e6f26dba8c7523ede54dadcfdaba9
https://hdl.handle.net/20.500.12105/13042
https://hdl.handle.net/20.500.12105/13042
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