Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Jose M. Escalante"'
Autor:
Jose M. Escalante
Publikováno v:
Computational Materials Science. 152:223-227
The electronic band structure of Germanium has been studied under high strain ( > 1 % ) using a combination of Keating’s model and Tight-Binding formalism. The study has been performed for different kinds of strains (uniaxial and biaxial) and consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152dce43af4c50e858004e551610b8cf
https://doi.org/10.1016/j.commatsci.2018.05.047
https://doi.org/10.1016/j.commatsci.2018.05.047
Autor:
Jose M. Escalante
Publikováno v:
Optical Materials. 79:420-427
Following the strain-doping approach for development of Ge based optical gain material, we have studied the impact of doping and strain on the optical properties of Germanium. Emphasizing the importance of the bandgap narrowing effect due to doping o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed47492c4e36fed0322b71995f620a29
https://doi.org/10.1016/j.optmat.2018.03.027
https://doi.org/10.1016/j.optmat.2018.03.027
Autor:
Mourad Oudich, Yan Pennec, Bahram Djafari-Rouhani, Alejandro Martínez, Said El Jallal, Jose M. Escalante, Nikos Papanikolaou, Jean-Charles Beugnot, Vincent Laude
Publikováno v:
Nanophotonics
Nanophotonics, Walter de Gruyter, 2014, 3 (6), pp.413-440. ⟨10.1515/nanoph-2014-0004⟩
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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Nanophotonics, 2014, 3 (6), pp.413-440. ⟨10.1515/nanoph-2014-0004⟩
Nanophotonics, Walter de Gruyter, 2014, 3 (6), pp.413-440. ⟨10.1515/nanoph-2014-0004⟩
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Nanophotonics, 2014, 3 (6), pp.413-440. ⟨10.1515/nanoph-2014-0004⟩
[EN] The interaction of light and sound waves at the micro and nanoscale has attracted considerable interest in recent years. The main reason is that this interaction is responsible for a wide variety of intriguing physical phenomena, ranging from th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a257c1d11cb9eeb096253e8004a0c28d
https://doi.org/10.1515/nanoph-2014-0004
https://doi.org/10.1515/nanoph-2014-0004
Autor:
Alejandro Martínez, Jose M. Escalante
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
instname
[EN] Optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. The reason is that a silicon laser would allow for the development of low-cost, high-volume monol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b361c73215e5ff2a36ea589fc95a439
https://doi.org/10.1007/s11082-013-9715-z
https://doi.org/10.1007/s11082-013-9715-z
Autor:
Alejandro Martínez, Jose M. Escalante
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
Physica B: Condensed Matter
instname
Physica B: Condensed Matter
[EN] We show a theoretical study that permits us to obtain the relationship between the coefficients of stimulated emission, spontaneous emission and absorption in indirect bandgap semiconductors, including multiphoton and multiphonon processes. (c)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81a503e05ba890ab076814e02bd62d3f
https://doi.org/10.1016/j.physb.2012.11.024
https://doi.org/10.1016/j.physb.2012.11.024
Autor:
Kevin Guilloy, Samuel Tardif, Hans Sigg, J. Rothman, Jose M. Escalante, J.M. Hartmann, Vincent Calvo, D. Rouchon, Nicolas Pauc, A. Chelnokov, Jérôme Faist, V. Reboud, J. Widiez, François Rieutord, Ivan Duchemin, Yann-Michel Niquet, T. Zabel, Esteban Marin, Alban Gassenq
Publikováno v:
2016 IEEE 13th International Conference on Group IV Photonics (GFP)
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.104-105, ⟨10.1109/GROUP4.2016.7739054⟩
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.104-105, ⟨10.1109/GROUP4.2016.7739054⟩
International audience; Summary form only given. Applying a large tensile strain of several percent in a Ge layer is promising in order to improve its optical properties and possibly turn germanium into an efficient CMOS compatible light emitter. Sev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed47dfc24392a372002b4c196f7b4211
https://hal.archives-ouvertes.fr/hal-02016529
https://hal.archives-ouvertes.fr/hal-02016529
Autor:
Vincent Reboud, Mathieu Bertrand, E. Gomez, Jose M. Escalante, Samuel Tardif, E. Bellet Amalric, Daivid Fowler, Kevin Guilloy, Vincent Calvo, Esteban Marin, Jérôme Faist, Julie Widiez, Ivan Duchemin, Hans Sigg, Alban Gassenq, T. Zabel, Denis Rouchon, R. Geiger, Nicolas Pauc, J. M. Hartmann, Alexei Chelnokov, François Rieutord, Yann-Michel Niquet
Publikováno v:
Web of Science
2016 IEEE 13th International Conference on Group IV Photonics (GFP)
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.140-142, ⟨10.1109/GROUP4.2016.7739074⟩
2016 IEEE 13th International Conference on Group IV Photonics (GFP)
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.140-142, ⟨10.1109/GROUP4.2016.7739074⟩
International audience; Using the Smart CutTM technology, we fabricated 200 mm optical Germanium-On-Insulator (GeOI) substrates for photonic applications. The high crystalline quality of the Ge layer opens the way to wafer-scale fabrication of photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40ade469f6395d56469c4d46b93f3d52
https://doi.org/10.1109/group4.2016.7739074
https://doi.org/10.1109/group4.2016.7739074
Autor:
Nicolas Pauc, Yann-Michel Niquet, D. Rouchon, Samuel Tardif, Jose M. Escalante, J.M. Hartmann, Alban Gassenq, Vincent Calvo, G. Osvaldo Dias, Vincent Reboud, A. Chelnokov, Ivan Duchemin, Kevin Guilloy
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2016, 613, pp.64-67. ⟨10.1016/j.tsf.2015.11.039⟩
Thin Solid Films, 2016, 613, pp.64-67. ⟨10.1016/j.tsf.2015.11.039⟩
Thin Solid Films, Elsevier, 2016, 613, pp.64-67. ⟨10.1016/j.tsf.2015.11.039⟩
Thin Solid Films, 2016, 613, pp.64-67. ⟨10.1016/j.tsf.2015.11.039⟩
International audience; The influence of pattern design and tensile strain on light emission was investigated in Ge layers and suspended membranes. The optical properties were examined by micro-photoluminescence and reflectivity. Tensile strain was e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8bc8fe19f010a0ba84509fd36c637fe
https://hal.archives-ouvertes.fr/hal-02016051
https://hal.archives-ouvertes.fr/hal-02016051
Autor:
Jérôme Faist, V. Reboud, François Rieutord, Samuel Tardif, Alexei Tchelnokov, Kevin Guilloy, Nicolas Pauc, Esteban Marin, Yann-Michel Niquet, Alban Gassenq, R. Geiger, Vincent Calvo, J. Rothman, Jose M. Escalante, J.M. Hartmann, C. Bozon, J. Widiez, T. Zabel, Ivan Duchemin, Hans Sigg
Publikováno v:
2016 IEEE 13th International Conference on Group IV Photonics (GFP)
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.40-41, ⟨10.1109/GROUP4.2016.7739082⟩
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.40-41, ⟨10.1109/GROUP4.2016.7739082⟩
International audience; Cavity enhanced photoluminescence at a wavelength as long as 5 μm is obtained in uniaxial tensile strained GeOI micro-bridges. We show, using temperature dependent photoluminescence spectroscopy, a crossover to fundamental di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::497c5354fd0e6d047888787addd57bc9
https://doi.org/10.1109/group4.2016.7739082
https://doi.org/10.1109/group4.2016.7739082
Autor:
Jérôme Faist, Alban Gassenq, Ivan Duchemin, E. Gomez, Vincent Calvo, Yann-Michel Niquet, T. Zabel, Kevin Guilloy, Alexei Chelnokov, Denis Rouchon, H. Sigg, R. Geiger, G. Osvaldo Dias, E. Marin, E. Bellet Amalric, Vincent Reboud, Julie Widiez, Daivid Fowler, François Rieutord, Nicolas Pauc, Samuel Tardif, Jose M. Escalante, J.M. Hartmann
Publikováno v:
SPIE OPTO
SPIE OPTO, Feb 2016, San Francisco, United States. pp.97520F, ⟨10.1117/12.2212597⟩
SPIE OPTO, Feb 2016, San Francisco, United States. pp.97520F, ⟨10.1117/12.2212597⟩
International audience; Currently, one of the main challenges in the field of silicon photonics is the fabrication of efficient laser sources compatible with the microelectronic fabrication technology. An alternative to the complexity of integration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::684fab86e1d6ea922a0aea7472ad6402
https://hal.archives-ouvertes.fr/hal-02016583
https://hal.archives-ouvertes.fr/hal-02016583