Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jos Klappe"'
Autor:
Oliver Ambacher, Reza Behtash, F. Bourgeois, M. Baeumler, Vladimir Polyakov, Paul J. van der Wel, K. Riepe, Rudiger Quay, Helmer Konstanzer, Wilfried Pletschen, Patrick Waltereit, T. Rodle, Michael Dammann, Wolfgang Bronner, M. Casar, Jos Klappe, Michael Mikulla, F. Gutle
Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2462a0e432abe0b458b5e139006e2c05
https://publica.fraunhofer.de/handle/publica/221516
https://publica.fraunhofer.de/handle/publica/221516
Publikováno v:
2008 European Microwave Integrated Circuit Conference.
We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78036f587eb727af9866a03819873f0e
https://doi.org/10.1109/emicc.2008.4772219
https://doi.org/10.1109/emicc.2008.4772219
Publikováno v:
Japanese Journal of Applied Physics; February 1991, Vol. 30 Issue: 2 p418-418, 1p