Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Jos E. M. Haverkort"'
Autor:
Sebastian Z. Oener, Alessandro Cavalli, Hongyu Sun, Jos E. M. Haverkort, Erik P. A. M. Bakkers, Erik C. Garnett
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Balancing the carrier selectivity and extraction by the selective contacts is of vital importance to the performance of the nanowire solar cells. Here Oener et al. employ a permanent local gate to overcome this tradeoff and substantially increase the
Externí odkaz:
https://doaj.org/article/0c4c51fc8ae440c7a602330765423043
Autor:
Marvin A. J. van Tilburg, Riccardo Farina, Victor T. van Lange, Wouter H. J. Peeters, Steffen Meder, Marvin M. Jansen, Marcel A. Verheijen, M. Vettori, Jonathan J. Finley, Erik. P. A. M. Bakkers, Jos. E. M. Haverkort
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-8 (2024)
Abstract Hexagonal crystal phase silicon-germanium (hex-SiGe) features efficient direct bandgap emission between 1.5 and 3.4 µm. For expanding its application potential, the key challenge is to demonstrate material gain for enabling a hex-SiGe semic
Externí odkaz:
https://doaj.org/article/b30a757cf6f64c05976a51a3e4be79b8
Autor:
Wouter H. J. Peeters, Victor T. van Lange, Abderrezak Belabbes, Max C. van Hemert, Marvin Marco Jansen, Riccardo Farina, Marvin A. J. van Tilburg, Marcel A. Verheijen, Silvana Botti, Friedhelm Bechstedt, Jos. E. M. Haverkort, Erik P. A. M. Bakkers
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Silicon is indisputably the most advanced material for scalable electronics, but it is a poor choice as a light source for photonic applications, due to its indirect band gap. The recently developed hexagonal Si1−x Ge x semiconductor featu
Externí odkaz:
https://doaj.org/article/61bafcf74a8a48459f1e085284adae99
Autor:
Michael S. Seifner, Sven Barth, Andreas Steiger-Thirsfeld, Alain Dijkstra, Alois Lugstein, Jos E. M. Haverkort, Masiar Sistani, Johannes Bernardi
Publikováno v:
ACS Nano
ACS Nano, 13(7), 8047-8054. American Chemical Society
ACS Nano, 13(7), 8047-8054. American Chemical Society
Highly oriented Ge 0.81Sn 0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae841cb2a26cf94da6969f28ed52f387
https://doi.org/10.1021/acsnano.9b02843
https://doi.org/10.1021/acsnano.9b02843
Autor:
Étienne Bouthillier, Jos E. M. Haverkort, Alain Dijkstra, Oussama Moutanabbir, Anis Attiaoui, Simone Assali
Publikováno v:
Physical Review Applied. 15
By independently engineering strain and composition, this work demonstrates and investigates direct-band-gap emission in the midinfrared range from ${\mathrm{Ge}}_{1\text{\ensuremath{-}}x}{\mathrm{Sn}}_{x}$ layers grown on silicon. We extend the room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d67cd4583e025d398582e2d77ba7f971
https://doi.org/10.1103/physrevapplied.15.024031
https://doi.org/10.1103/physrevapplied.15.024031
Autor:
Jaime Gómez Rivas, Gabriel W. Castellanos, Dick K. G. de Boer, Jos E. M. Haverkort, Ksenia Korzun
Publikováno v:
Advanced Optical Materials, 9(2):2001636. Wiley
A lossless solar cell operating at the Shockley–Queisser limit generates an open circuit voltage (Voc) equal to the radiative limit. At Voc, the highly directional beam of photons from the sun is absorbed and subsequently externally re-emitted into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bb85e6990582a84a48c46a6ad5d1e93
http://www.scopus.com/inward/record.url?scp=85096634286&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85096634286&partnerID=8YFLogxK
Publikováno v:
Nano Letters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::cc1ecc1d2dcaed80759a31bf3760949b
Autor:
Leo Miglio, Ilaria Zardo, Lin Sun, Marcel A. Verheijen, Jos E. M. Haverkort, Diego de Matteis, Erik P. A. M. Bakkers, Marta De Luca, Alain Dijkstra, Yizhen Ren, Elham M. T. Fadaly, Silvana Botti, Anna Marzegalli, Andrey Sarikov, Riccardo Rurali, Emilio Scalise
Publikováno v:
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Nano Letters
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters, 21(8), 3619-3625. American Chemical Society
Consejo Superior de Investigaciones Científicas (CSIC)
Nano Letters
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters, 21(8), 3619-3625. American Chemical Society
Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64d1f0612c2db0f597c51b8bc499b8f2
Autor:
D. Busse, Alain Dijkstra, Jens Renè Suckert, Claudia Rödl, M. A. J. V. Tilburg, V. T. V. Lange, Jos E. M. Haverkort, Marcel A. Verheijen, Jürgen Furthmüller, Silvana Botti, Erik P. A. M. Bakkers, Elham M. T. Fadaly, Friedhelm Bechstedt, Jonathan J. Finley
Publikováno v:
2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings
Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca14ddf3f9482d4a76c85e2cebd4b332
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf
Autor:
Heinz Schmid, Jürgen Furthmüller, Marcel A. Verheijen, Sebastian Kölling, Alain Dijkstra, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jens Renè Suckert, Elham M. T. Fadaly, Jos E. M. Haverkort, M. A. J. V. Tilburg, Jonathan J. Finley, Dorian Ziss, V. T. V. Lange, Julian Stangl, Silvana Botti, Philipp Staudinger, D. Busse, Claudia Rödl
Publikováno v:
Novel In-Plane Semiconductor Lasers XIX.
Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a381043b1eb8ff0580bffa1e0eecc0a7
https://doi.org/10.1117/12.2544968
https://doi.org/10.1117/12.2544968