Zobrazeno 1 - 10
of 10
pro vyhledávání: '"José Ramón Ramos-Barrado"'
Autor:
Juan Agustín Badán, Elena Navarrete-Astorga, Rodrigo Henríquez, Francisco Martín Jiménez, Daniel Ariosa, José Ramón Ramos-Barrado, Enrique A. Dalchiele
Publikováno v:
Nanomaterials, Vol 12, Iss 4, p 617 (2022)
Silver nanoparticles (NPs) on glass substrates were obtained by a solid-state thermal dewetting (SSD) process using vacuum-evaporated-silver precursor layers. An exhaustive investigation of the morphological, structural, and surface chemistry propert
Externí odkaz:
https://doaj.org/article/9de02927bfe448e0b21eb511d6e60809
Publikováno v:
Sensors, Vol 15, Iss 5, Pp 11628-11652 (2015)
The Internet of things (IoT) is a novel paradigm where all things or objects in daily life can communicate with other devices and provide services over the Internet. Things or objects need identifying, sensing, networking and processing capabilities
Externí odkaz:
https://doaj.org/article/7588f57aa7634be4ae88e8ee8bcd52cb
Autor:
Mercedes Gabás Pérez, Francisco Jiménez, M.C. López-Escalante, Dietmar Leinen, José Ramón Ramos Barrado
Publikováno v:
Solar Energy. 206:269-278
Silicon solar cell current–voltage (I-V) curve measurement is the final characterization procedure used in a photovoltaic (PV) industrial line. The illumination I-V curve measurements are of interest because they determine the solar cell power, rel
Publikováno v:
Sensors, Vol 16, Iss 7, p 985 (2016)
The IEEE 802.15.4 standard is widely recognized as one of the most successful enabling technologies for short range low rate wireless communications and it is used in IoT applications. It covers all the details related to the MAC and PHY layers of th
Externí odkaz:
https://doaj.org/article/c55d0fe5937948158bb156d8fc671a10
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 16, Iss 7, p 985 (2016)
Sensors; Volume 16; Issue 7; Pages: 985
Sensors, Vol 16, Iss 7, p 985 (2016)
Sensors; Volume 16; Issue 7; Pages: 985
The IEEE 802.15.4 standard is widely recognized as one of the most successful enabling technologies for short range low rate wireless communications and it is used in IoT applications. It covers all the details related to the MAC and PHY layers of th
Autor:
Jorge Rodriguez Moreno, Miguel Marin Enriquez, José Ramón Ramos Barrado, Elena Navarrete Astorga
Publikováno v:
2015 10th Spanish Conference on Electron Devices (CDE).
Dispensing technology was tested to be used for obtaining aluminum contacts for silicon solar cells. Two different aluminum pastes were used and the specific contact resistance was compared for both of them. The FTC method was tested as well by the u
Publikováno v:
APL materials 2 (2014). doi:10.1063/1.4863595
info:cnr-pdr/source/autori:Gabas, M.; Torelli, P.; Barrett, N. T.; Sacchi, M.; Barrado, Jose R. Ramos/titolo:Electronic structure of Al-and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy/doi:10.1063%2F1.4863595/rivista:APL materials/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:2
APL Materials
APL Materials, 2014, 2 (1), pp.012112. ⟨10.1063/1.4863595⟩
APL Materials, AIP Publishing 2014, 2 (1), pp.012112. ⟨10.1063/1.4863595⟩
'APL Materials ', vol: 2, pages: 012112-1-012112-6 (2014)
APL Materials, Vol 2, Iss 1, Pp 012112-012112-6 (2014)
info:cnr-pdr/source/autori:Gabas, M.; Torelli, P.; Barrett, N. T.; Sacchi, M.; Barrado, Jose R. Ramos/titolo:Electronic structure of Al-and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy/doi:10.1063%2F1.4863595/rivista:APL materials/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:2
APL Materials
APL Materials, 2014, 2 (1), pp.012112. ⟨10.1063/1.4863595⟩
APL Materials, AIP Publishing 2014, 2 (1), pp.012112. ⟨10.1063/1.4863595⟩
'APL Materials ', vol: 2, pages: 012112-1-012112-6 (2014)
APL Materials, Vol 2, Iss 1, Pp 012112-012112-6 (2014)
International audience; Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99e63718ffa00874b2ebcb1ceade9c98
https://publications.cnr.it/doc/312819
https://publications.cnr.it/doc/312819
Autor:
Juan P. Espinós, Agustín R. González-Elipe, José Ramón Ramos Barrado, Julián Morales, Jesús Santos
Publikováno v:
Journal of Solid State Chemistry. 150:391-398
Single crystals of SnS 2 were intercalated with ethylenediamine (en) and propylenediamine (pn) by direct reaction. The resulting novel compounds were examined by different techniques including XRD, XPS, a.c. impedance, TG, and TPD measurements. The o
Autor:
Ying Cui, Fabien Bruneval, Maurizio Sacchi, Laura Simonelli, Nicholas Barrett, Piero Torelli, Pilar Díaz-Carrasco, José Ramón Ramos Barrado, Mercedes Gabás
Publikováno v:
Physical review. B, Condensed matter and materials physics 84 (2011). doi:10.1103/PhysRevB.84.153303
info:cnr-pdr/source/autori:M. Gabas, P. Torelli, N. T. Barret, M. Sacchi, F. Bruneval, Y. Cui, L. Simonelli. P. Diaz-Carrasco and J. R. R. Barrado/titolo:Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films/doi:10.1103%2FPhysRevB.84.153303/rivista:Physical review. B, Condensed matter and materials physics/anno:2011/pagina_da:/pagina_a:/intervallo_pagine:/volume:84
info:cnr-pdr/source/autori:M. Gabas, P. Torelli, N. T. Barret, M. Sacchi, F. Bruneval, Y. Cui, L. Simonelli. P. Diaz-Carrasco and J. R. R. Barrado/titolo:Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films/doi:10.1103%2FPhysRevB.84.153303/rivista:Physical review. B, Condensed matter and materials physics/anno:2011/pagina_da:/pagina_a:/intervallo_pagine:/volume:84
We present a synchrotron radiation hard x-ray photoemission spectroscopy study of the electronic structure of Al-doped ZnO films. Doping-induced states appear between the Zn3$d$ and O2$p$ levels and in the band gap just below the conduction band mini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::752e8b71048eb8727377d9d3c17c8498
http://www.cnr.it/prodotto/i/190433
http://www.cnr.it/prodotto/i/190433
Autor:
Marco Orellana, Dietmar Leinen, Paula Grez, Ricardo Córdova, Rodrigo Del Río, Humberto Gómez, Paula Cury, ‡ and José Ramón Ramos-Barrado, Ricardo Schrebler
Publikováno v:
LANGMUIR
Artículos CONICYT
CONICYT Chile
instacron:CONICYT
Artículos CONICYT
CONICYT Chile
instacron:CONICYT
CuxS (x → 2) thin films were obtained by sulfidization of copper thin films previously obtained by spin-coating from a dichloromethane solution of [Cu(II)(2-ethyl hexanoate)2(H2O)2] deposited on ITO substrate, irradiated with UV light and electroch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36fdcdc320c428d260e9216b504043c9