Zobrazeno 1 - 10
of 13
pro vyhledávání: '"José R. Sánchez-Pérez"'
Autor:
Gabriel Hernández, Lorena González-Sepúlveda, Juan C Portela, José R Sánchez-Pérez, José M. Busquets, Luisam Tarrats, Luis Serrano
Publikováno v:
International Forum of Allergy & Rhinology. 7:615-623
Background The conventional treatment for idiopathic intracranial hypertension involves weight loss, steroids, diuretics, and/or serial lumbar punctures; however, if the symptoms persist or worsen, surgical intervention is recommended. Surgical optio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06cce0ace5d624e01ed821879f743e3
https://doi.org/10.1002/alr.21927
https://doi.org/10.1002/alr.21927
Autor:
Hyuncheol Shin, Max G. Lagally, Jon Rodriguez, Eric Stava, Paul V. Gwozdz, José R. Sánchez Pérez, Robert H. Blick, Minrui Yu
Publikováno v:
Optical Materials Express. 10:1991
We demonstrate a novel approach for achieving rapid, consistent, and controllable micro-pore fabrication in single-crystalline quartz. These micro-pores are essential for applications in biology, i.e., studying ion channels in general and mechano-sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5952a8459be1a0c0fd4f269de9e75103
https://doi.org/10.1364/ome.395494
https://doi.org/10.1364/ome.395494
Publikováno v:
ACS Nano. 8:3136-3151
The controlled application of strain in crystalline semiconductors can be used to modify their basic physical properties to enhance performance in electronic and photonic device applications. In germanium, tensile strain can even be used to change th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be26c0185c56aff8ce12192ca7163990
https://doi.org/10.1021/nn404739b
https://doi.org/10.1021/nn404739b
Autor:
Deborah M. Paskiewicz, Faisal F. Sudradjat, José R. Sánchez-Pérez, RB Jacobson, Cicek Boztug, Roberto Paiella, Max G. Lagally
Publikováno v:
Small. 9:622-630
The use of tensilely strained Ge nanomembranes as mid-infrared optical gain media is investigated. Biaxial tensile strain in Ge has the effect of lowering the direct energy bandgap relative to the fundamental indirect one, thereby increasing the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5181f274e472207078777561bd218dc
https://doi.org/10.1002/smll.201201090
https://doi.org/10.1002/smll.201201090
Autor:
José R. Sánchez-Pérez, Mark A. Eriksson, Xian Wu, Xiaorui Cui, Donald E. Savage, RB Jacobson, Deborah M. Paskiewicz, Dan Ward, Yize Stephanie Li, Susan Coppersmith, Max G. Lagally, Pornsatit Sookchoo, Ryan H. Foote, R. T. Mohr
Publikováno v:
ACS nano. 9(5)
To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af28d4e03f0d0e02face9242734c554
https://pubmed.ncbi.nlm.nih.gov/25932940
https://pubmed.ncbi.nlm.nih.gov/25932940
Publikováno v:
Advanced Photonics 2015.
Large strain-induced enhancements in radiation efficiency are demonstrated using germanium nanomembranes coated with mechanically flexible photonic-crystal slabs of disconnected dielectric pillars.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2809ee3e7a1e0bb6d861b703737b562a
https://doi.org/10.1364/iprsn.2015.it3a.4
https://doi.org/10.1364/iprsn.2015.it3a.4
Publikováno v:
Active Photonic Materials VI.
The development of practical light sources based on group-IV semiconductors is a major outstanding goal of optoelectronics research, as a way to enable the continued integration of electronic and photonic functionalities on a CMOS compatible platform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a0bee0e1de32b741190ff6e1bdb359
https://doi.org/10.1117/12.2063293
https://doi.org/10.1117/12.2063293
Publikováno v:
CLEO: 2014.
Photonic-crystal cavities compatible with the highly subwavelength thicknesses and flexibility requirements of mechanically-stressed Ge nanomembranes are developed and used to demonstrate a strong (20×) strain-induced light-emission efficiency enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af210d7f32f5aad3a756cce25b9c4a32
https://doi.org/10.1364/cleo_si.2014.stu2h.4
https://doi.org/10.1364/cleo_si.2014.stu2h.4
Autor:
Max G. Lagally, Deborah M. Paskiewicz, Faisal F. Sudradjat, José R. Sánchez-Pérez, Feng Chen, Cicek Boztug, RB Jacobson, Roberto Paiella
Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc377607acfb8a4a80dcf01c754019ab
https://europepmc.org/articles/PMC3223450/
https://europepmc.org/articles/PMC3223450/
Autor:
Stefan M. Oehrlein, José R. Sánchez-Pérez, Max G. Lagally, Ryan J. Kershner, RB Jacobson, Frank S. Flack
Publikováno v:
Nanoscale Research Letters
We demonstrate the use of holographic optical tweezers for trapping and manipulating silicon nanomembranes. These macroscopic free-standing sheets of single-crystalline silicon are attractive for use in next-generation flexible electronics. We achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd6f8b64b391c504a7f0befe1c520bf4
https://pubmed.ncbi.nlm.nih.gov/21867504
https://pubmed.ncbi.nlm.nih.gov/21867504