Zobrazeno 1 - 2
of 2
pro vyhledávání: '"José M. Ruiz-Palmero"'
Publikováno v:
Solid-State Electronics. 51:842-859
Aggressively scaled type-I and type-II InP-based single and double-heterojunction bipolar transistor technologies are compared for ultrahigh-speed digital applications. Device and circuit figures-of-merit, as well as thermal characteristics are studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e224367e6d74ad671d10bfc64f79fc
https://doi.org/10.1016/j.sse.2007.04.005
https://doi.org/10.1016/j.sse.2007.04.005
Publikováno v:
Solid-State Electronics. 50:1595-1611
In this paper we demonstrate a physical two-dimensional hydrodynamic (2D HD) model which simulates the DC and AC characteristics of vertically and laterally scaled InP/InGaAs(P) type I double heterojunction bipolar transistors (DHBTs) with state-of-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c5be87aa7bdc819fa4842b5920cf4f
https://doi.org/10.1016/j.sse.2006.07.014
https://doi.org/10.1016/j.sse.2006.07.014