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Autor:
Albert Hertel, Michaela Eichinger, Laurits O. Andersen, David M.T. van Zanten, Sangeeth Kallatt, Pasquale Scarlino, Anders Kringhøj, José M. Chavez-Garcia, Geoffrey C. Gardner, Sergei Gronin, Michael J. Manfra, András Gyenis, Morten Kjaergaard, Charles M. Marcus, Karl D. Petersson
Publikováno v:
Physical Review Applied. 18
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal