Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3 : electron doping and plasmons

Autor: Pablo Ordejón, Francisco Guinea, José Ángel Silva-Guillén, Enric Canadell, Rafael Roldán

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
Silva-Guillén, J A, Canadell, E, Ordejón, P, Guinea, F & Roldán, R 2017, ' Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS 3 : Electron doping and plasmons ', 2 D Materials, vol. 4, no. 2, 025085 . https://doi.org/10.1088/2053-1583/aa6b92
2D Materials
Digital.CSIC. Repositorio Institucional del CSIC
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Analysis of the band structure of TiS3 single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital compo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09977c1604ae8cc02e2546850a6f17b3
http://hdl.handle.net/2072/438266

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene

Autor: Kaixiang Huang, Shengyong Qin, Haohao Shi, Mikhail I. Katsnelson, Pengju Li, Shengjun Yuan, Zhen Zhan, Runxiao Zhang, Hengxing Ji, Zhikai Qi, Kun Xie, Zhenyu Zhang, Edo van Veen, José Ángel Silva-Guillén

Publikováno v: Nature Communications
Nature Communications, 11
Nature Communications, 11, 1
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Her

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2b5083b23eb89e81d6218bf64b85e05
http://arxiv.org/abs/1905.04515

Coexistence of Elastic Modulations in the Charge Density Wave State of 2 H-NbSe

Autor: Bogdan, Guster, Carmen, Rubio-Verdú, Roberto, Robles, Javier, Zaldívar, Paul, Dreher, Miguel, Pruneda, José Ángel, Silva-Guillén, Deung-Jang, Choi, José I, Pascual, Miguel M, Ugeda, Pablo, Ordejón, Enric, Canadell

Publikováno v: Nano letters. 19(5)

Bulk and single-layer 2 H-NbSe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::b2ff6b917d0c2553bc92a6a66a222eff
https://pubmed.ncbi.nlm.nih.gov/30998364

Electronic properties of single-layer and multilayer transition metal dichalcogenidesMX2(M= Mo, W andX= S, Se)

Autor: Emmanuele Cappelluti, M. Pilar López-Sancho, Francisco Guinea, Rafael Roldán, Pablo Ordejón, José Ángel Silva-Guillén

Publikováno v: Annalen der Physik. 526:347-357

Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest , not only from the fundamental point of view, but also because of their potential application in ultrathin devices.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3554103a2deb0f0baa404c23814bc250
https://doi.org/10.1002/andp.201400128

Electronic band structure of transition metal dichalcogenides from ab initio and slater-koster tight-binding model

Autor: Pablo San-Jose, Rafael Roldán, José Ángel Silva-Guillén

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
instname
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
Applied Sciences; Volume 6; Issue 10; Pages: 284
Applied Sciences, Vol 6, Iss 10, p 284 (2016)

Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d868e1071f49b8a860bc64ca68a946bb
http://hdl.handle.net/20.500.12614/388