Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jorn P. van Engelen"'
Autor:
MK Meint Smit, Yi Wang, Yuqing Jiao, P.J. van Veldhoven, Kevin A. Williams, Victor Dolores Calzadilla, Jorn P. van Engelen, Tjibbe de Vries
Publikováno v:
Optical Materials Express, 11(8):431963, 2478-2487. Optical Society of America (OSA)
Butt-joint regrowth is widely used in photonic integration, but it has been challenging to break the density-quality tradeoff due to the edge growth rate enhancement (GRE) effect. In this work, we propose a scheme to circumvent this tradeoff by using
Publikováno v:
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters, 31(13):8715809, 1041-1044. Institute of Electrical and Electronics Engineers
IEEE Photonics Technology Letters, 31(13):8715809, 1041-1044. Institute of Electrical and Electronics Engineers
In this letter, a reflection-type arrayed waveguide grating (AWG) (de)multiplexer using high-reflection photonic crystal reflector (PCR) in the Indium-phosphide Membrane on Silicon (IMOS) platform is proposed and experimentally demonstrated for the f
Autor:
Kevin A. Williams, Jorn P. van Engelen, V. Dolores-Calzadilla, Manuel B. J. van Rijn, Yi Wang, Xuebing Zhang, MK Meint Smit, Yuqing Jiao, Zizheng Cao, Sander Reniers
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics, 27(1):8931248. Institute of Electrical and Electronics Engineers
Optical beam steerers on InP integrated photonics have not been able to offer high angular resolution, due to the technological challenges in realizing a large emission aperture. In this paper, we propose the creation of waveguide-based grating anten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0db3677514320d06ffbaf7848372bce
https://research.tue.nl/nl/publications/5f737a2b-8995-49c9-996b-cca5b424daa2
https://research.tue.nl/nl/publications/5f737a2b-8995-49c9-996b-cca5b424daa2
Autor:
Tianran Liu, Sander Reniers, René van Veldhoven, A. A. Kashi, Kevin A. Williams, Zizheng Cao, Rakesh Ranjan Kumar, Hon Ki Tsang, Vadim Pogoretskii, MK Meint Smit, Tjibbe de Vries, Jeroen Bolk, Jorn P. van Engelen, Francesco Pagliano, Yi Wang, EJ Erik Jan Geluk, Jos J. G. M. van der Tol, Yuqing Jiao, Andrea Fiore, Weiming Yao, Xinran Zhao, Xuebing Zhang, Huub Ambrosius
Publikováno v:
Physica Status Solidi (A) Applications and Materials Science, 217(3):1900606. Wiley-VCH Verlag
physica status solidi (a)
physica status solidi (a)
Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::349a10e5451f5bbc8858a886307621dc
https://research.tue.nl/nl/publications/8dd93fa2-7aa6-44f9-84ea-905d9ed53a08
https://research.tue.nl/nl/publications/8dd93fa2-7aa6-44f9-84ea-905d9ed53a08
Autor:
Kevin A. Williams, Jos J. G. M. van der Tol, Nobuhiko Nishiyama, Tomohiro Amemiya, Victor Dolores Calzadilla, Yuqing Jiao, Vadim Pogoretskiy, Shigehisa Arai, Jorn P. van Engelen, Yi Wang, Zizheng Cao, Marc Spiegelberg, Sander Reniers, A. A. Kashi
Publikováno v:
Semiconductor Science and Technology
Recently a novel photonic integration technology, based on a thin InP-based membrane, is emerging. This technology offers monolithic integration of active and passive functions in a sub-micron thick membrane. The enhanced optical confinement in the m
Autor:
Yuqing Jiao, Jos J. G. M. van der Tol, Kevin A. Williams, Jorn P. van Engelen, A. A. Kashi, Vadim Pogoretskiy
Publikováno v:
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics, 56(1):6300107, 1-7. Institute of Electrical and Electronics Engineers
IEEE Journal of Quantum Electronics, 56(1):6300107, 1-7. Institute of Electrical and Electronics Engineers
InP membranes have appeared in the last decade as a viable integrated photonics platform, suitable for adding photonic functions to silicon electronics. It combines the strengths of silicon photonics (high index contrasts and therefore small footprin
Autor:
Yuqing Jiao, Sander Reniers, Kevin A. Williams, Jorn P. van Engelen, Jos J. G. M. van der Tol, Jeroen Bolk
Publikováno v:
2019 Compound Semiconductor Week, CSW 2019-Proceedings
For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of $1. 3\pm 0.1\mathbf{dB}/\mathbf{cm}$ is demonstrated in a Mac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::499462eaa2d3d362ccdbb66237bd0898
http://www.scopus.com/inward/record.url?scp=85071671069&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85071671069&partnerID=8YFLogxK
Publikováno v:
Compound Semiconductor Week (CSW 2019)
In this paper we review the recent developments in the nanophotonic platform IMOS. High-performance optical amplifier based on twin-guide active-passive integration scheme has been demonstrated, enabling continuous wave operated lasers on IMOS. Futur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d11d1a71c437042b4766205ba3ab862
https://research.tue.nl/nl/publications/1c38745d-d13d-44a0-ac40-7fd6e12c7fd1
https://research.tue.nl/nl/publications/1c38745d-d13d-44a0-ac40-7fd6e12c7fd1
Autor:
Ali Emre Kaplan, Yuqing Jiao, Jos J. G. M. van der Tol, Gaetano Bellanca, Jorn P. van Engelen, Paolo Bassi
Publikováno v:
OSA Continuum, 2(10), 2844-2854. OSA Publishing
OSA Continuum
OSA Continuum
We experimentally study the performance of directional couplers fabricated in indium-phosphide membrane on silicon (IMOS) technology. We both investigate the validity of the coupled mode theory (CMT) applied to directional coupler structures with hig
Autor:
Jorn P. van Engelen, Jos J. G. M. van der Tol, L. Shen, MK Meint Smit, Yuqing Jiao, Gunther Roelkens
Publikováno v:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IEEE Journal of Selected Topics in Quantum Electronics, 24(1):3300108. Institute of Electrical and Electronics Engineers
IEEE Journal of Selected Topics in Quantum Electronics, 24(1):3300108. Institute of Electrical and Electronics Engineers
We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modul