Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Joris Baele"'
Autor:
A. Constant, Freddy De Pestel, H. Ziad, Joris Baele, Tomas Novak, Peter Coppens, Petr Kostelník
Publikováno v:
Materials Science in Semiconductor Processing. 137:106157
Polycrystalline AlN grown on Si3N4 by metal organic chemical vapor deposition is found to be wet etched by EKC265™ polymer strip solution, in which the active component is hydroxylamine (H3NO). The etch rate shows to be strongly dependent on surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e10191688d31b3beda7b9b1d449e4a
https://doi.org/10.1016/j.mssp.2021.106157
https://doi.org/10.1016/j.mssp.2021.106157
Publikováno v:
Materials Science in Semiconductor Processing. 129:105806
In this work, the temperature dependence of the specific contact resistance in Au-free ohmic contacts formed on AlGaN/GaN heterostructures is studied for different barrier layer characteristics, i.e. thickness and surface roughness of the AlGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc86c5d4430ba65b2d8d80ceed9c17c
https://doi.org/10.1016/j.mssp.2021.105806
https://doi.org/10.1016/j.mssp.2021.105806
Publikováno v:
Journal of Applied Physics. 120:104502
The formation mechanism of non-recessed Au–free Ohmic contacts on the AlGaN/GaN heterostructures is investigated for various Ti/Al atomic ratios (Al–rich versus Ti–rich) and annealing temperatures ranging from 500 to 950 °C. It is shown that T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1a3594ed7a17654fbed2707b57b79f
https://doi.org/10.1063/1.4962314
https://doi.org/10.1063/1.4962314
Autor:
T. Quddus, J. Parsey, Gordy Grivna, Marnix Tack, H. De Vleeschouwer, Joris Baele, Gary H. Loechelt, Peter Moens, Yujing Wu, P. Zdebel, F. Bogman, H. Ziad
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
This paper for the first time reports on a novel “local” charge balanced trench-based super junction transistor. The local charge balance is achieved by selectively growing thin highly-doped n-type and p-type layers in a deep trench structure. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25aa1384446fdac59ddba127aa350b46
https://doi.org/10.1109/ispsd.2011.5890851
https://doi.org/10.1109/ispsd.2011.5890851
Autor:
K. Vershinin, H. Ziad, E.M. Sankara Narayanan, Peter Moens, B. Desoete, Marnix Tack, Filip Bauwens, Joris Baele
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
Experimental data are shown for integrated smart power transistors breaking the silicon limit at 100V. The performance is close to the much lower super-junction limit for the given device pitch. The device uses standard trench technology and is imple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bebe0ef4390185e90385895e6dcba5c
https://doi.org/10.1109/ispsd.2008.4538878
https://doi.org/10.1109/ispsd.2008.4538878
Autor:
E. De Backer, Joris Baele, Piet Vanmeerbeek, Peter Moens, Filip Bauwens, Marnix Tack, J. Meersman, C. Goessens, B. Desoete, Jaume Roig
Publikováno v:
9th International Seminar on Power Semiconductors (ISPS 2008).
This paper reports on the record performance of a novel power switching device, integrated in a 0.35 μm based smart power technology. The transistor uses trench processing to make a vertical stack of gate oxide and drift oxide, the latter being used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aefb1c9e113cf98280e6b16cddc94a9
https://doi.org/10.1049/ic:20080215
https://doi.org/10.1049/ic:20080215
Autor:
E. M. Shankara Narayanan, Filip Bauwens, Joris Baele, Marnix Tack, K. Vershinin, H. Ziad, B. Desoete, P. Moens
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
Experimental data are shown for integrated smart power transistors breaking the silicon limit at 100 V. The performance is close to the much lower super-junction limit for the given device pitch. The device uses standard trench technology, and is imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cba209b8878962b080a69c346a0228df
https://doi.org/10.1109/ispsd.2007.4294931
https://doi.org/10.1109/ispsd.2007.4294931
Autor:
Marnix Tack, P. Moens, Joris Baele, Filip Bauwens, E.M. Sankara Narayanan, K. Vershinin, E. DeBacker
Publikováno v:
2006 International Electron Devices Meeting.
Record performance of a novel power transistor integrated in a 0.35 μm power IC technology is reported. Measured specific on-state resistance of 33 mOhm*mm2 for a 94 V breakdown is breaking the silicon-limit and is the lowest reported value to date.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ab1373a8d80367de3845695c3702bae
https://doi.org/10.1109/iedm.2006.346933
https://doi.org/10.1109/iedm.2006.346933
Autor:
P. Moens, S. Boonen, Marnix Tack, H. De Vleeschouwer, Filip Bauwens, P. Coppens, Joris Baele, F. De Pestel
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
An extensive investigation of the reliability of deep trench isolation structures upon reverse bias stress is performed. By using the variable base level charge pumping technique, it is shown that the degradation of the trench primarily originates fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818a8635054b36c8f6e9a3dce24a650d
https://doi.org/10.1109/relphy.2005.1493150
https://doi.org/10.1109/relphy.2005.1493150
Publikováno v:
ECS Meeting Abstracts. :1046-1046
During failure analysis on high voltage I3T50 products, it was found that irregular Nsinker regions were present in the top region of the wafer. This Nsinker distortion, also called POCl3 deformation, was shown during failure analysis to be linked to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b86614d5ef7658fc06ee2eb72c97688
https://doi.org/10.1149/ma2007-02/18/1046
https://doi.org/10.1149/ma2007-02/18/1046