Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jorge Romero-Gonzalez"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 400-408 (2021)
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes. In this paper, we extracted the parasitic and intrinsic capacitances of a silicon-n
Externí odkaz:
https://doaj.org/article/ce9ad7328d474fedab9cfa4c4c81ea88
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 1, Pp 35-43 (2018)
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technol
Externí odkaz:
https://doaj.org/article/19949c6140404e3ebccaecebf503e7e4
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 400-408 (2021)
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes. In this paper, we extracted the parasitic and intrinsic capacitances of a silicon-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::674a59ad96c1fa1201b6bd154a737154
https://ieeexplore.ieee.org/document/9393456/
https://ieeexplore.ieee.org/document/9393456/
Publikováno v:
Functionality-Enhanced Devices An alternative to Moore's Law ISBN: 9781785615580
In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a072a2201737046265b1b686af4fd4
https://doi.org/10.1049/pbcs039e_ch10
https://doi.org/10.1049/pbcs039e_ch10
Publikováno v:
Functionality-Enhanced Devices An alternative to Moore's Law ISBN: 9781785615580
The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2388ec491678fa0e38e0c233766a942a
https://doi.org/10.1049/pbcs039e_ch6
https://doi.org/10.1049/pbcs039e_ch6
Publikováno v:
ICRC
Three-Independent-Gate Field-Effect Transistors (TIGFETs)extend the functional diversity of a single transistor by allowing a dynamic electric reconfiguration of the polarity. This property has been shown to unlock unique circuit level opportunities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c946a5cfc3217784052f34bc289d98
https://doi.org/10.1109/icrc.2018.8638608
https://doi.org/10.1109/icrc.2018.8638608
Autor:
Tarun Agarwal, Yashwanth Balaji, Jorge Romero Gonzalez, Pierre-Emmanuel Gaillardon, Giovanni V. Resta, Francky Catthor, Iuliana Radu, Dennis Lin, Giovanni De Micheli
Publikováno v:
DATE
Web of Science
Web of Science
As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d346bcb921b1c6d1c2eb99568890241
https://doi.org/10.23919/date.2018.8342088
https://doi.org/10.23919/date.2018.8342088
Publikováno v:
NANOARCH
Three-Independent-Gate Field Effect Transistors (TIGFETs) are capable of different modes of operation thanks to their additional gate terminals. By electrically controlling their side gates, TIGFETs can act either as a p-type or an n-type transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66c577eb8e2feaabb8ccd4c149b4aaf5
https://doi.org/10.1109/nanoarch.2017.8053723
https://doi.org/10.1109/nanoarch.2017.8053723